公开(公告)号：US20200350900A1

公开(公告)日：2020-11-05

申请号：US16933057

申请日：2020-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Seok SHIN ,  Jung Ho LEE ,  Michael CHOI

IPC: H03K17/06 ,  H02M3/07 ,  G11C27/02

Abstract: A bootstrap circuit including: a charge pump; a power unit including a bootstrap capacitor, wherein the bootstrap capacitor is charged using an output voltage of the charge pump; and a switch driver for generating a bootstrap signal based on a clock signal and an analog signal, wherein the analog signal is input to an analog switch, the switch driver for controlling the analog switch using the bootstrap signal, and including a first body switch connected between an input terminal and a body of the analog switch.

公开(公告)号：US20160028981A1

公开(公告)日：2016-01-28

申请号：US14730885

申请日：2015-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Ho LEE ,  Hae Sick SUL ,  Sin Hwan LIM ,  Kyung Min KIM ,  Ho Jin PARK ,  Jae Cheol YUN ,  Michael CHOI

IPC: H04N5/378 ,  H04N5/369 ,  H04N5/357

CPC classification number: H04N5/378 ,  H04N5/3698 ,  H04N5/3745

Abstract: An image processing device includes a switch signal generator, an amplifier, a ramp generator, and an attenuation control circuit. The switch signal generator generates switch control signals based on a level of an image signal that corresponds to a pixel signal output from a pixel. The amplifier includes a first input terminal and a second input terminal. The ramp generator generates a ramp signal. The attenuation control circuit adjusts an arrangement of capacitors according to the switch control signals to control whether to attenuate each of the pixel signal and the ramp signal, and transmits signals generated as a result of the adjusted arrangement to the first input terminal and the second input terminal.

Abstract translation: 图像处理装置包括开关信号发生器，放大器，斜坡发生器和衰减控制电路。 开关信号发生器基于与从像素输出的像素信号相对应的图像信号的电平产生开关控制信号。 放大器包括第一输入端和第二输入端。 斜坡发生器产生斜坡信号。 衰减控制电路根据开关控制信号调整电容器的布置，以控制是否衰减像素信号和斜坡信号中的每一个，并且将作为调整结果的结果产生的信号发送到第一输入端和第二输入端 终奌站。

公开(公告)号：US20240130127A1

公开(公告)日：2024-04-18

申请号：US18450969

申请日：2023-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beyong Hyun KOH ,  Ho Jin KIM ,  Geun Won LIM ,  Jung Ho LEE ,  Hyun Gun JANG

IPC: H10B43/27 ,  G11C5/06 ,  G11C16/04 ,  H01L23/528 ,  H01L29/08 ,  H10B43/10 ,  H10B43/35

CPC classification number: H10B43/27 ,  G11C5/063 ,  G11C16/0483 ,  H01L23/5283 ,  H01L29/0847 ,  H10B43/10 ,  H10B43/35

Abstract: A semiconductor memory device comprises a substrate; a mold structure on the substrate; a plurality of channel structures extending in the mold structure; a source layer and a source sacrificial layer between the substrate and the mold structure, wherein the source sacrificial layer is spaced apart from the source layer; and a source support layer on the source layer and the source sacrificial layer, wherein the source support layer is between the source layer and the source sacrificial layer, wherein an upper surface of the source support layer includes first and second portions extending parallel to the substrate, and a third portion that connects the first and second portions, wherein a vertical distance from an upper surface of the source layer to the first portion is smaller than a vertical distance from an upper surface of the substrate to the second portion.

公开(公告)号：US20220020438A1

公开(公告)日：2022-01-20

申请号：US17195824

申请日：2021-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Ho SEO ,  Jung Ho LEE ,  Dae Sik HAM ,  Gi Baek KIM ,  Sang Yong YOON ,  Won-Taeck JUNG

IPC: G11C16/30 ,  G11C16/10 ,  G11C16/26 ,  G11C16/04 ,  G11C16/08

Abstract: A non-volatile memory device including: a first string including a first string select transistor, a first memory cell and a first ground select transistor, a second string including a second string select transistor, a second memory cell and a second ground select transistor, and a controller to apply a pass voltage to a first string select line from a first time, apply a first read voltage to a first word line during a first read section from the first time to a second time, apply a first ground select line voltage to a first ground select line from the first time, apply a ground voltage to a second string select line, apply the first ground select line voltage to a second ground select line during a first control section, and apply a first common source line voltage to a common source line during the first control section.