-
公开(公告)号：US20210296577A1
公开(公告)日：2021-09-23
申请号：US17337768
申请日：2021-06-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Whan-Kyun KIM , Deok-Hyeon KANG , Woo-Jin KIM , Woo-Chang LIM , Jun-Ho JEONG
Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.
-
公开(公告)号：US20190165262A1
公开(公告)日：2019-05-30
申请号：US16114638
申请日：2018-08-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Whan-Kyun KIM , Deok-Hyeon KANG , Woo-Jin KIM , Woo-Chang LIM , Jun-Ho JEONG
CPC classification number: H01L43/12 , G11C11/161 , H01F10/3254 , H01F41/307 , H01F41/32 , H01L27/228 , H01L43/02
Abstract: A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.
-
Search Results
2
records
(took 0.009 seconds)
