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公开(公告)号:US09716214B2
公开(公告)日:2017-07-25
申请号:US15147315
申请日:2016-05-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ju-heon Yoon , Hak-hwan Kim , Dae-sup Kim , Jeong-hee Kim , Dong-myung Shin , Kwang-seok Yun
CPC classification number: H01L33/62 , H01L33/16 , H01L33/20 , H01L33/38 , H05B33/086
Abstract: An LED package includes a substrate, a light-emitting structure provided on the substrate, an electrode structure provided on the light-emitting structure, and an external connection terminal provided on the electrode structure, the external connection terminal comprising a major axis and a minor axis. The major axis of the external connection terminal is perpendicular to a cleaving plane of the substrate.
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公开(公告)号:US10340420B2
公开(公告)日:2019-07-02
申请号:US15876435
申请日:2018-01-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ju-heon Yoon , Jae-in Sim , Gi-bum Kim , Ha-yeong Son , Young-sub Shin
IPC: H01L33/24 , H01L33/00 , H01L33/08 , H01L33/60 , H01L25/07 , H01L51/52 , H01L21/02 , H01L33/40 , H01L25/075
Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.
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公开(公告)号:US09263652B2
公开(公告)日:2016-02-16
申请号:US14154312
申请日:2014-01-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ju-heon Yoon , Gi-bum Kim , Sang-yeon Kim , Sang-yeob Song , Won-goo Hur
CPC classification number: H01L33/60 , H01L33/405 , H01L33/46 , H01L2224/13
Abstract: A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.
Abstract translation: 半导体发光器件包括具有发光结构的半导体区域,形成在半导体区域上的电极层,以及反射保护结构,其延伸暴露电极层的上表面并覆盖与电极层相邻的半导体区域 。
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