公开(公告)号：US20130228747A1

公开(公告)日：2013-09-05

申请号：US13855540

申请日：2013-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

Abstract translation: 提供一种氮化物半导体发光器件，其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。 氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。 彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。

公开(公告)号：US20140326944A1

公开(公告)日：2014-11-06

申请号：US14192776

申请日：2014-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Wook SHIM ,  Jin Young LIM ,  Jae Sung HYUN

IPC: H01L33/06 ,  H01L33/26

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/32

Abstract: A method of manufacturing a nitride semiconductor light emitting device includes forming a first conductivity type nitride semiconductor layer. An active layer is formed on the first conductivity type nitride semiconductor layer. A second conductivity type nitride semiconductor layer is formed on the active layer. In the forming of the active layer, quantum well layers and quantum barrier layers are alternatively stacked and at least two dopant layers are formed inside of at least one of the quantum well layers. The dopant layers are doped with a dopant in a predetermined concentration.

Abstract translation: 一种制造氮化物半导体发光器件的方法包括形成第一导电型氮化物半导体层。 在第一导电型氮化物半导体层上形成有源层。 在有源层上形成第二导电型氮化物半导体层。 在有源层的形成中，量子阱层和量子势垒层交替层叠，并且在至少一个量子阱层的内部形成至少两个掺杂剂层。 掺杂剂层以预定浓度掺杂掺杂剂。

公开(公告)号：US20140231746A1

公开(公告)日：2014-08-21

申请号：US14083101

申请日：2013-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Sung HYUN ,  Hyun Wook SHIM ,  Jin Young LIM

IPC: H01L33/02 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/025 ,  H01L33/32 ,  H01L33/382 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01S5/0425 ,  H01S5/3054 ,  H01S5/3077 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer includes a first impurity region including a p-type impurity and a second impurity region including an n-type impurity. The first and second impurity regions are alternately repeated at least once.

Abstract translation: 半导体发光器件包括n型半导体层，p型半导体层和介于n型半导体层和p型半导体层之间的有源层。 p型半导体层包括包含p型杂质的第一杂质区和包含n型杂质的第二杂质区。 第一和第二杂质区交替重复至少一次。

公开(公告)号：US20150048394A1

公开(公告)日：2015-02-19

申请号：US14297233

申请日：2014-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Wook SHIM ,  Young Sun KIM ,  Jae Sung HYUN

IPC: H01L33/62 ,  H01L33/52 ,  H01L33/60 ,  H01L33/08 ,  H01L33/50

CPC classification number: H01L25/0756 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device package includes a body including a lead frame part, and a light emitting laminate disposed on the body and electrically connected to the lead frame part to emit light. The light emitting laminate has a multilayer structure in which a plurality of light emitting devices are stacked. In the plurality of light emitting devices, an upper light emitting device is stacked on a lower light emitting device such that vertex portions of the upper light emitting device do not overlap and are offset from vertex portions of the lower light emitting device, and portions of the lower light emitting device are externally exposed.

Abstract translation: 发光器件封装包括包括引线框架部分的主体和设置在主体上并电连接到引线框架部分以发光的发光层压板。 发光层叠体具有堆叠多个发光元件的多层结构。 在多个发光器件中，上部发光器件堆叠在下部发光器件上，使得上部发光器件的顶点部分不重叠并且偏离下部发光器件的顶点部分，并且部分 下部发光器件被外部暴露。

公开(公告)号：US20130228792A1

公开(公告)日：2013-09-05

申请号：US13784916

申请日：2013-03-05

Applicant: SAMSUNG Electronics Co., Ltd

Inventor： Hyun Wook SHIM ,  Tonk Ik SHIN ,  Nam Sung KIM ,  Young Sun KIM

IPC: H01L33/12

CPC classification number: H01L33/12 ,  H01L33/02 ,  H01L33/641 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a substrate having a through hole formed in a thickness direction thereof and a conductive nanowire provided in at least a portion of the through hole, and a light emitting structure formed on the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

Abstract translation: 一种半导体发光器件包括：具有沿其厚度方向形成的通孔的基板和设置在所述通孔的至少一部分中的导电纳米线;以及形成在所述基板上并包括第一导电半导体层的发光结构， 有源层和第二导电半导体层。

公开(公告)号：US20150037920A1

公开(公告)日：2015-02-05

申请号：US14518948

申请日：2014-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Sun MAENG ,  Young Sun KIM ,  Hyun Wook SHIM ,  Sung Tae KIM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

Abstract: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

Abstract translation: 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

公开(公告)号：US20140147954A1

公开(公告)日：2014-05-29

申请号：US14167877

申请日：2014-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Ju LEE ,  Heon Ho LEE ,  Hyun Wook SHIM ,  Young Sun KIM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/007 ,  H01L33/32

Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Abstract translation: 提供了一种制造发光二极管的方法和由其制造的发光二极管。 该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层和未掺杂的氮化物半导体层; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。