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公开(公告)号：US10579286B2
公开(公告)日：2020-03-03
申请号：US16120832
申请日：2018-09-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hee-Tai Oh , Walter Jun
Abstract: A memory device includes a nonvolatile memory having a first block and a memory controller configured to exchange data with the nonvolatile memory. The memory controller includes a first processor to divide the first block into first and second domains, a second processor to generate a reclaim signal by determining whether to perform reclaiming on each of the first and second domains and a third processor performer which reclaims each of the first and second domains according to the reclaim signal and merges the first and second domains.
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公开(公告)号：US09208028B2
公开(公告)日：2015-12-08
申请号：US13935600
申请日：2013-07-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shin-Ho Oh , Hee-Tai Oh
CPC classification number: G06F11/1415 , G06F11/0727 , G06F11/1402 , G06F11/141
Abstract: A method managing execution of recovery code in a memory system includes; upon detecting a read error using a CPU and firmware to execute recovery code defining a read recovery operation including a read retry operation, during execution of the recovery code, generating a read request directed to the read retry operation, and immediately thereafter terminating execution of the recovery code, and thereafter, only upon receiving an asynchronous interrupt from the memory controller following completion of the read retry operation, the CPU resumes execution of the recovery code by the firmware, otherwise the CPU performs another task unrelated to execution of the recovery code.
Abstract translation: 管理存储系统中的恢复码的执行的方法包括： 在使用CPU和固件检测到读取错误以执行定义包括读取重试操作的读取恢复操作的恢复代码时，在执行恢复代码期间，生成针对读取重试操作的读取请求，并且立即终止执行 恢复码，此后，只有在读取重试操作完成之后才从存储器控制器接收到异步中断，CPU才恢复固件执行恢复代码，否则CPU执行与执行恢复代码无关的另一个任务。
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公开(公告)号：US11449382B2
公开(公告)日：2022-09-20
申请号：US16558866
申请日：2019-09-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hee-Tai Oh
Abstract: A memory system includes a non-volatile memory device and controller circuitry. The non-volatile memory device includes an array of memory cells that includes memory blocks and pages. Each separate memory block includes a separate, respective set of one or more pages. The controller circuitry is configured to control an operation of the non-volatile memory device. The controller circuitry includes processing circuitry configured to perform a recovery operation for the non-volatile memory device in response to a determination that a specific event has occurred at the memory system during a program operation of the non-volatile memory device. The recovery operation includes determining status information associated with a first group including at least one page, determining a quantity of a set of pages included in a second group based on the status information, and programming dummy data for one or more pages of the set of pages included in the second group.
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