公开(公告)号：US20180130713A1

公开(公告)日：2018-05-10

申请号：US15583167

申请日：2017-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIRCO CANTORO ,  YUN-IL LEE ,  HYUNG-SUK LEE ,  YEON-CHEOL HEO ,  BYOUNG-GI KIM ,  CHANG-MIN YOE ,  SEUNG-CHAN YUN ,  DONG-HUN LEE

IPC: H01L21/8234 ,  H01L29/24 ,  H01L29/161 ,  H01L29/267 ,  H01L27/088

Abstract: A semiconductor device includes a first semiconductor pattern doped with first impurities on a substrate, a first channel pattern on the first semiconductor pattern, second semiconductor patterns doped with second impurities contacting upper edge surfaces, respectively, of the first channel pattern, and a first gate structure surrounding at least a portion of a sidewall of the first channel pattern.

公开(公告)号：US20170200803A1

公开(公告)日：2017-07-13

申请号：US14992080

申请日：2016-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNG-SUK LEE

IPC: H01L29/51 ,  H01L29/06 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/511 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823462 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/785

Abstract: A semiconductor device is provided. The Semiconductor device includes a first active fin and a second active fin disposed on a substrate. A first gate electrode intersects the first active fin. A second gate electrode intersects the second active fin. A first gate insulation layer includes a first high dielectric constant insulation layer. The first gate insulation layer is disposed between the first gate electrode and the first active fin. A second gate insulation layer includes a second high dielectric constant insulation layer. The second gate insulation layer is disposed between the second gate electrode and the second active fin. A thickness of the first high dielectric constant insulation layer is thicker than a thickness of the second high dielectric constant insulation layer.