公开(公告)号：US20180130713A1

公开(公告)日：2018-05-10

申请号：US15583167

申请日：2017-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIRCO CANTORO ,  YUN-IL LEE ,  HYUNG-SUK LEE ,  YEON-CHEOL HEO ,  BYOUNG-GI KIM ,  CHANG-MIN YOE ,  SEUNG-CHAN YUN ,  DONG-HUN LEE

IPC: H01L21/8234 ,  H01L29/24 ,  H01L29/161 ,  H01L29/267 ,  H01L27/088

Abstract: A semiconductor device includes a first semiconductor pattern doped with first impurities on a substrate, a first channel pattern on the first semiconductor pattern, second semiconductor patterns doped with second impurities contacting upper edge surfaces, respectively, of the first channel pattern, and a first gate structure surrounding at least a portion of a sidewall of the first channel pattern.