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公开(公告)号：US10942800B2
公开(公告)日：2021-03-09
申请号：US16139983
申请日：2018-09-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dukyoung Yun , Chul-Woo Lee
Abstract: A storage device which generates dump data for debugging at the occurrence of an error includes a memory device including a dump area for storing the dump data, and a storage controller that receives a dump request from a host through a first host interface, stores the dump data in the dump area in response to the dump request, and transmits the stored dump data to the host by using a second host interface after resetting the second host interface.
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公开(公告)号：US09563503B2
公开(公告)日：2017-02-07
申请号：US14718907
申请日：2015-05-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-Young Seo , Dukyoung Yun
CPC classification number: G06F11/1068 , G06F11/1048 , G06F12/00 , G11C7/14 , G11C11/5642 , G11C16/0483 , G11C16/28 , G11C29/021 , G11C29/028
Abstract: A system comprises a nonvolatile memory device comprising a memory cell array comprising a plurality of memory blocks each comprising a plurality of cell strings, each of cell strings comprises the plurality of memory cells stacked in a direction perpendicular to a substrate, a ground selection transistor disposed between the memory cells and the substrate, and a string selection transistor disposed between the memory cells and a bitline, and configured to read stored data from the memory cells using a plurality of read voltages; and a memory controller configured to read the memory cells using a reference voltage to generate on-cell data, and adjust the read voltages of the nonvolatile memory device based on the generated on-cell data.
Abstract translation: 一种系统包括非易失性存储器件，其包括存储单元阵列，该存储单元阵列包括多个存储块，每个存储块包括多个单元串，每个单元串包括沿垂直于衬底的方向堆叠的多个存储单元， 存储单元和基板之间的串联选择晶体管，以及设置在存储单元和位线之间的串选择晶体管，并且被配置为使用多个读取电压从存储单元读取存储的数据; 以及存储器控制器，被配置为使用参考电压来读取存储器单元以产生单电池数据，并且基于所生成的单元数据来调整非易失性存储器件的读取电压。
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