公开(公告)号：US20220238707A1

公开(公告)日：2022-07-28

申请号：US17659571

申请日：2022-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gil YANG ,  Beom-Jin PARK ,  Seung-Min SONG ,  Geum-Jong BAE ,  Dong-Il BAE

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/308 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/786 ,  H01L29/423 ,  H01L29/775

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

公开(公告)号：US20150372143A1

公开(公告)日：2015-12-24

申请号：US14310640

申请日：2014-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Il BAE ,  Kang-Ill SEO

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/161 ,  H01L29/423

CPC classification number: H01L29/161 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device is provided. A fin type active pattern, extending in a first direction, protrudes from a substrate. A gate electrode is disposed on the fin type active pattern. The gate electrode extends in a second direction crossing the first direction. A recess region is disposed in the fin type active pattern disposed at one side of the gate electrode. The recess region includes an upper region having a first width in the first direction and a lower region having a second width smaller than the first width. A first epitaxial layer is disposed on the upper and lower regions of the recess region. A second epitaxial layer is disposed on the first epitaxial layer to fill the recess region.

Abstract translation: 提供半导体器件。 从第一方向延伸的翅片型有源图案从基板突出。 栅极电极设置在翅片型有源图案上。 栅电极沿与第一方向交叉的第二方向延伸。 在设置在栅电极的一侧的翅片型有源图案中设置有凹部区域。 凹部区域包括在第一方向上具有第一宽度的上部区域和具有小于第一宽度的第二宽度的下部区域。 第一外延层设置在凹陷区域的上部和下部区域上。 第二外延层设置在第一外延层上以填充凹陷区域。