公开(公告)号：US20170186614A1

公开(公告)日：2017-06-29

申请号：US15294818

申请日：2016-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cha-won KO ,  Hyun-woo KIM ,  Youn-joung CHO ,  Jin-kyu HAN

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0337 ,  G03F7/0382 ,  G03F7/36 ,  G03F7/40 ,  G03F7/405 ,  H01L21/02118 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0231 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/31144

Abstract: A method of forming a semiconductor device includes forming an etching layer on a substrate, forming a photoresist layer on the etching layer, forming an exposed area configured to define an unexposed area in the photoresist layer, forming a hardmask layer on the exposed area using a selective deposition process, partially removing the photoresist layer using the hardmask layer as an etch mask and forming a photoresist pattern, and etching the etching layer using the photoresist pattern as an etch mask and forming a fine pattern.