公开(公告)号：US20040160816A1

公开(公告)日：2004-08-19

申请号：US10776233

申请日：2004-02-12

申请人： SAMSUNG ELECTRONICS CO., LTD

发明人： In-kyeong Yoo ,  Byong-man Kim

IPC分类号： G11C011/00

CPC分类号： B82Y10/00 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

摘要： A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.

公开(公告)号：US20040155283A1

公开(公告)日：2004-08-12

申请号：US10774456

申请日：2004-02-10

申请人： SAMSUNG ELECTRONICS CO, LTD.

发明人： In-kyeong Yoo ,  Byong-man Kim

IPC分类号： H01L029/788

CPC分类号： B82Y10/00 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

摘要： A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.

公开(公告)号：US20030170930A1

公开(公告)日：2003-09-11

申请号：US10361024

申请日：2003-02-10

申请人： Samsung Electronics Co., Ltd.

发明人： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

IPC分类号： H01L035/24 ,  H01L051/00 ,  H01L051/40 ,  H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/119 ,  H01L031/113

CPC分类号： B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  Y10S977/943

摘要： A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

摘要翻译： 一种由碳纳米管存储器件及其形成方法形成的快速，可靠，高度集成的存储器件，其中碳纳米管存储器件包括衬底，源电极，漏电极，具有高电的碳纳米管和 热导率，具有优异电荷存储能力的存储单元和栅电极。 源电极和漏电极在它们之间以预定间隔布置在衬底上并经受电压。 碳纳米管将源电极连接到漏电极并用作电荷运动的通道。 存储单元位于碳纳米管之上，并存储来自碳纳米管的电荷。 栅电极形成为与存储单元的上表面接触，并控制从碳纳米管流入存储单元的电荷量。

公开(公告)号：US20030053399A1

公开(公告)日：2003-03-20

申请号：US10090629

申请日：2002-03-06

申请人： Samsung Electronics Co., Ltd.

发明人： In-kyeong Yoo ,  Won-bong Choi ,  Byong-man Kim

IPC分类号： G11B009/00

CPC分类号： G11B11/08 ,  G11B9/08 ,  G11B13/00

摘要： A high-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the same are provided. The high-density information storage apparatus includes a lower electrode, a photoconductive layer and a recording medium sequentially provided on the lower electrode, a conductive layer converting unit for making the photoconductive layer conductive, a data write and read unit for writing data to the recording medium or reading data from the recording medium, a data loss preventing unit for preventing loss of data during data write and read operations, and a power supply connected to the lower electrode and the data write and read unit, for supplying voltage necessary for reading and writing data.

摘要翻译： 提供了使用电子发射的高密度信息存储装置和使用其的写入，读取和擦除信息的方法。 高密度信息存储装置包括下电极，光电导层和顺序地设置在下电极上的记录介质，用于使光电导层导通的导电层转换单元，用于将数据写入记录的数据写入和读取单元 介质或从记录介质读取数据，数据丢失防止单元，用于防止数据写入和读取操作期间的数据丢失，以及连接到下部电极和数据写入和读取单元的电源，用于提供读取所需的电压 写数据