公开(公告)号：US20140102766A1

公开(公告)日：2014-04-17

申请号：US13831534

申请日：2013-03-14

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Da Hee Kim ,  Yoong Oh ,  Ki Young Yoo ,  Han Ul Lee ,  Myung Sam Kang ,  Ki Hwan Kim

IPC: H05K3/46 ,  H05K1/02

CPC classification number: H05K3/46 ,  H05K1/0298 ,  H05K3/4647 ,  H05K3/4682 ,  H05K2203/025 ,  H05K2203/0733 ,  Y10T29/49155

Abstract: Disclosed herein is a multi-layer type coreless substrate, including: a first insulating layer including at least one first pillar; a plurality of insulating layers laminated on one surface or both surfaces of the first insulating layer, each including at least one circuit layer and at least another pillar connected to the circuit layer; and a plurality of outermost circuit layers contacting a pillar disposed on an outermost insulating layer of the plurality of insulating layers.

Abstract translation: 本文公开了一种多层型无芯基板，包括：第一绝缘层，其包括至少一个第一柱; 层叠在第一绝缘层的一个表面或两个表面上的多个绝缘层，每个绝缘层包括至少一个电路层和至少另一个连接到电路层的柱; 以及与设置在所述多个绝缘层的最外绝缘层上的柱接触的多个最外层电路层。

公开(公告)号：US10347556B2

公开(公告)日：2019-07-09

申请号：US15966723

申请日：2018-04-30

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Han Ul Lee ,  Jin Su Kim ,  Young Gwan Ko

IPC: H01L23/48 ,  H01L21/44 ,  H01L23/31 ,  H01L25/18 ,  H01L23/538 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48 ,  H01L21/683 ,  H01L21/3105 ,  H01L23/498 ,  H01L25/065

Abstract: A semiconductor device includes: a chip having an active surface having connection pads disposed thereon; an encapsulant encapsulating at least portions of the chip; a connection member disposed on the active surface of the chip and including a redistribution layer electrically connected to the connection pads; a passivation layer disposed on the connection member; and an under bump metallurgy (UBM) layer at least partially embedded in the passivation layer and electrically connected to the redistribution layer of the connection member. The UBM layer includes a UBM pad partially embedded in the passivation layer and a UVM via penetrating through a portion of the passivation layer and electrically connecting the redistribution layer of the connection member and the UBM pad to each other. A portion of a side surface of the UBM pad is exposed through an opening formed in the passivation layer and the opening surrounds the UBM pad.

公开(公告)号：US10026668B1

公开(公告)日：2018-07-17

申请号：US15802170

申请日：2017-11-02

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Han Ul Lee ,  Jin Su Kim ,  Young Gwan Ko

IPC: H01L23/48 ,  H01L21/44 ,  H01L23/31 ,  H01L25/18 ,  H01L23/538 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48 ,  H01L21/683 ,  H01L21/3105 ,  H01L23/498

Abstract: A semiconductor device includes: a chip having an active surface having connection pads disposed thereon; an encapsulant encapsulating at least portions of the chip; a connection member disposed on the active surface of the chip and including a redistribution layer electrically connected to the connection pads; a passivation layer disposed on the connection member; and an under bump metallurgy (UBM) layer at least partially embedded in the passivation layer and electrically connected to the redistribution layer of the connection member. The UBM layer includes a UBM pad partially embedded in the passivation layer and a UVM via penetrating through a portion of the passivation layer and electrically connecting the redistribution layer of the connection member and the UBM pad to each other. A portion of a side surface of the UBM pad is exposed through an opening formed in the passivation layer and the opening surrounds the UBM pad.