公开(公告)号：US20200152879A1

公开(公告)日：2020-05-14

申请号：US16656462

申请日：2019-10-17

Applicant: Samsung Display Co., Ltd.

Inventor： KATSUSHI KISHIMOTO

IPC: H01L51/00 ,  H01L51/56

Abstract: A bake system may include a chamber having an internal space, a stage disposed in the internal space of the chamber and on which a target substrate is disposed, a gas ejection structure providing a process gas in the chamber, an exhaust structure, an atmosphere analyzer monitoring moisture and oxygen in the chamber, and a gas supplier controlling a flow rate of the process gas based on information provided from the atmosphere analyzer. The exhaust structure may include a suction part disposed in the internal space, and an exhaust part connected to the suction part and is disposed outside the chamber.

公开(公告)号：US20170092773A1

公开(公告)日：2017-03-30

申请号：US15374189

申请日：2016-12-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KATSUSHI KISHIMOTO ,  YOSHINORI TANAKA ,  YEON KEON MOON ,  SANG WOO SOHN ,  SANG WON SHIN ,  TAKAYUKI FUKASAWA

IPC: H01L29/786 ,  C23C14/34 ,  H01J37/34 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7869 ,  C23C14/3414 ,  H01J37/3429 ,  H01J37/3491 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78693

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

公开(公告)号：US20150255611A1

公开(公告)日：2015-09-10

申请号：US14487916

申请日：2014-09-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KATSUSHI KISHIMOTO ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC: H01L29/786 ,  H01L29/26 ,  H01J37/34

CPC classification number: H01L29/7869 ,  C23C14/3414 ,  H01J37/3429 ,  H01J37/3491 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78693

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

Abstract translation: 氧化物溅射靶包括铟（In），锌（Zn），锡（Sn）和镓（Ga）以及钨（W）中的至少一种，其量为0.005mol％至1mol％。