公开(公告)号：US08552483B2

公开(公告)日：2013-10-08

申请号：US13541428

申请日：2012-07-03

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/102 ,  H01L31/101 ,  H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US20120267692A1

公开(公告)日：2012-10-25

申请号：US13541455

申请日：2012-07-03

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L27/148

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的X-Y地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧。 并且从硅层的另一侧即从与布线层相反的一侧（背面）吸收可见光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US20090227064A1

公开(公告)日：2009-09-10

申请号：US12468692

申请日：2009-05-19

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/0224 ,  H01L23/544 ,  H01L21/304

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见 从硅层的另一侧，即从与布线层相对的一侧（背面）吸入光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US20150243692A1

公开(公告)日：2015-08-27

申请号：US14625179

申请日：2015-02-18

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的X-Y地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧。 并且从硅层的另一侧即从与布线层相反的一侧（背面）吸收可见光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US08471317B2

公开(公告)日：2013-06-25

申请号：US13541455

申请日：2012-07-03

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/102 ,  H01L31/101 ,  H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer, wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见 从硅层的另一侧，即从与布线层相反的一侧（背面）吸收光，可以在不考虑光接收表面的情况下进行布线，并且布线的自由度 像素被增强。

公开(公告)号：US07547927B2

公开(公告)日：2009-06-16

申请号：US10940553

申请日：2004-09-14

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/0328

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见 从硅层的另一侧，即从与布线层相对的一侧（背面）吸入光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US20080067556A1

公开(公告)日：2008-03-20

申请号：US11981389

申请日：2007-10-30

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L27/148 ,  H01L21/339

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见 从硅层的另一侧，即从与布线层相对的一侧（背面）吸入光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US20050030399A1

公开(公告)日：2005-02-10

申请号：US10940554

申请日：2004-09-14

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L27/146 ,  H01L27/01 ,  H01L27/15 ,  H01L31/10 ,  H04N5/335 ,  H04N5/374

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US08623690B2

公开(公告)日：2014-01-07

申请号：US12468692

申请日：2009-05-19

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L21/00

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见 从硅层的另一侧，即从与布线层相对的一侧（背面）吸入光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US20080076202A1

公开(公告)日：2008-03-27

申请号：US11981467

申请日：2007-10-30

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L21/00

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见 从硅层的另一侧，即从与布线层相对的一侧（背面）吸入光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。