公开(公告)号：US5130760A

公开(公告)日：1992-07-14

申请号：US714113

申请日：1991-06-11

申请人： Walter T. Matzen ,  Ronald B. Foster

发明人： Walter T. Matzen ,  Ronald B. Foster

IPC分类号： H01L29/866 ,  H01L27/02

CPC分类号： H01L27/0248 ,  Y10S257/926

摘要： A semiconductor device is provided for use as a bidirectional surge suppressor circuit. It incorporates doped regions of substrate and epitaxial layers which result in a dual Zener diode arrangement having the Zener diodes associated in an opposite polarity arrangement. The semiconductor device comprises a substrate with an epitaxial layer deposited on one of its surfaces. In an upper surface of the epitaxial layer, first and second regions of P type material are diffused with guard rings comprising P+ type material diffused around the first and second regions. The guard rings are heavily doped and extend much deeper than the relatively shallow junctions of P material. A channel stopper of N+ conductivity type material is diffused into the upper surface of the epitaxial layer to provide a channel stopper, or sinker, around both the first and second regions and their associated guard rings and, additionally, between the first and second regions. This structure provides several significant advantages including reduced current leakage reliability, uniform breakdown voltage, crack resistance and a smaller area needed to provide the required thermal capacity.

公开(公告)号：US20240230563A1

公开(公告)日：2024-07-11

申请号：US18402556

申请日：2024-01-02

申请人： Ronald B. Foster

发明人： Ronald B. Foster

IPC分类号： G01N25/18 ,  F28F21/08 ,  F28F27/02 ,  G01N25/00

CPC分类号： G01N25/18 ,  F28F21/085 ,  F28F27/02 ,  G01N25/005 ,  F28F2200/005 ,  F28F2250/104

摘要： The present invention is a system and method for determining effective ground thermal properties. Accurate prediction of required loop length for geothermal heat exchange systems is critical for optimizing performance and associated cost, yet limited by lack of knowledge of the effective average thermal properties of the surrounding ground. Testing involves first charging the ground loop by circulating fluid at constant temperature and constant rate of heat input, then halting heat input and monitoring the ground loop temperatures during discharge. One aspect of the invention is to enable separate determination of effective ground thermal conductivity and volumetric heat capacity first by adopting design elements resulting in improved reproducibility, and second by evaluating thermal conductivity near the time when the quotient Q of later discharge temperature to start-of-discharge fluid temperature is almost independent of volumetric heat capacity. Evaluation discharge times are specific to both ground loop design and charging conditions.

公开(公告)号：US20240240868A1

公开(公告)日：2024-07-18

申请号：US18411544

申请日：2024-01-12

申请人： Ronald B. Foster

发明人： Ronald B. Foster

IPC分类号： F28D7/10

CPC分类号： F28D7/10

摘要： The invention is a heat exchange system and method relying on circulation of a fluid through a loop to exchange thermal energy with the ground. A metallic shell pipe, optionally inserted into the ground by the direct push method, is in intimate thermal contact with the ground and accommodates one or two U-tube loops placed internally followed by introduction of a thermally conductive filler to occupy remaining volume and to thermally connect the outer radii of the U-tube pipes to the inner radius of the shell pipe. The U-tube loops are formed of either metallic pipes for lowest thermal resistance or plastic pipes for lowest cost. Shell pipe volume is precisely known, allowing for precise metering of filler, either liquid or particulates suspended in a liquid. The semi-sealed shell pipe provides superior environmental protection, eliminating potential for ground water contamination and allowing use of corrosion-susceptible pipe materials such as copper.

公开(公告)号：US06500577B2

公开(公告)日：2002-12-31

申请号：US09745566

申请日：2000-12-26

申请人： Ronald B. Foster

发明人： Ronald B. Foster

IPC分类号： H01M810

CPC分类号： H01M8/241 ,  H01M8/0271 ,  H01M8/2483

摘要： Disclosed is a polymer electrolyte membrane (PEM) fuel cell assembly apparatus for receiving an inserted membrane electrode assembly (MEA). The apparatus includes modular features for connecting a plurality of fuel cells into a planar fuel cell “stack” capable of using ambient air to supply oxidant gas and dissipate heat and water vapor. The invention also facilitates convenient removal and replacement of individual cells or MEAs in a stack without disassembly of the entire stack.

公开(公告)号：US4952904A

公开(公告)日：1990-08-28

申请号：US289098

申请日：1988-12-23

申请人： Robert G. Johnson ,  James O. Holmen ,  Ronald B. Foster ,  Uppili Sridhar

发明人： Robert G. Johnson ,  James O. Holmen ,  Ronald B. Foster ,  Uppili Sridhar

IPC分类号： G01P5/12 ,  G01F1/68 ,  G01F1/684 ,  G01F1/692 ,  H01C7/00

CPC分类号： G01F1/6845 ,  H01C7/006

摘要： The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500.degree.-1000.degree. C.) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion Layvr, approximately 20 To 100 angstromw in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence.

公开(公告)号：US4507851A

公开(公告)日：1985-04-02

申请号：US373778

申请日：1982-04-30

申请人： Keith A. Joyner ,  Ronald B. Foster

发明人： Keith A. Joyner ,  Ronald B. Foster

IPC分类号： C23C14/14 ,  C23C14/02 ,  C23C14/06 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  C23C15/00 ,  H01L21/443

CPC分类号： H01L21/32051 ,  C23C14/022 ,  Y10S438/906

摘要： Disclosed is a process for depositing a metal film on a silicon oxide or silicon nitride surface. This process provides an extremely adherent metallic film and is resistant to interdiffusion between the semiconductor, the insulator, and the metal. The process includes forming contact openings through an insulating layer to a silicon substrate; sputter etching the insulating layer and exposed substrate; depositing layers of platinum, a barrier metal and a conducting metal; and heating to form platinum silicide in the contact openings. The process is useful in forming an electrical interconnection system on a semiconductor device.

摘要翻译： 公开了一种在氧化硅或氮化硅表面上沉积金属膜的方法。 该方法提供极其粘附的金属膜，并且能够抵抗半导体，绝缘体和金属之间的相互扩散。 该工艺包括通过绝缘层形成接触开口到硅衬底; 溅射蚀刻绝缘层和暴露的基板; 沉积铂层，阻挡金属和导电金属; 并加热以在接触开口中形成硅化铂。 该方法可用于在半导体器件上形成电互连系统。