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    Airflow amount measuring device
    1.
    发明授权
    Airflow amount measuring device 有权

    公开(公告)号：US12169137B2

    公开(公告)日：2024-12-17

    申请号：US17801620

    申请日：2020-12-25

    Applicant: Hitachi Astemo, Ltd.

    Inventor： Binti Haridan Fatin Farhanah ,  Hiroyuki Abe ,  Takayuki Yogo ,  Nozomi Yatsumonji ,  Mizuki Ijuin

    IPC: G01F1/692

    Abstract: To provide an airflow amount measuring device capable of accurately measuring a flow amount of air without occurrence of warpage in a thin film portion when an airflow measuring element is mounted on a lead frame to form a resin-sealed package in which the airflow amount measuring element and the lead frame are sealed. A chip package includes a lead frame, an element mounted on the lead frame and having a detection portion, and a structure for sealing the lead frame and the element such that at least the detection portion is exposed. Then, the curvature radius ρ of the exposed portion of the element exposed from the sealing resin member is 2.13 or less.

    SENSOR ELEMENT
    2.
    发明公开
    SENSOR ELEMENT 审中-公开

    公开(公告)号：US20240247960A1

    公开(公告)日：2024-07-25

    申请号：US18290501

    申请日：2022-05-10

    Applicant: KOA CORPORATION

    Inventor： Satoshi KANEGAE ,  Katsuya MIURA ,  Isao NAGASAKA

    IPC: G01F1/692

    CPC classification number: G01F1/692

    Abstract: Provided is a sensor element capable of obtaining a wide sensing region, suppressing unevenness of a temperature distribution in the sensing region, and obtaining substantially constant sensor sensitivity. A sensor element according to the present invention includes: a base; a temperature-sensitive film formed on an entire surface of the base and having an electric resistance value that changes due to a change in temperature; and wiring members connected to both ends of the temperature-sensitive film. The temperature-sensitive film includes connection regions connected to the wiring members and a pattern extending from each of the connection regions toward a center of the base, and a cross-sectional area of the pattern is smaller on the connection region sides than at the center of the base.

    FLOW SENSOR ELEMENT
    3.
    发明公开
    FLOW SENSOR ELEMENT 审中-公开

    公开(公告)号：US20230296418A1

    公开(公告)日：2023-09-21

    申请号：US18013705

    申请日：2021-06-16

    Applicant: KOA CORPORATION

    Inventor： Masahiro SHIMODAIRA ,  Katsuya MIURA

    IPC: G01F1/692

    CPC classification number: G01F1/692

    Abstract: An object is to provide a flow sensor element is non-directional and has an excellent sensor sensitivity. A flow sensor element includes a base body having a spherical shape, and a temperature-sensitive film pattern that is disposed over the entirety of a surface of the base body, and changes in an electrical resistance value due to a change in temperature. It is preferable that the temperature-sensitive film pattern be formed by trimming a temperature-sensitive film that has been formed on the surface of the base body. In the flow sensor element, the temperature-sensitive film pattern can be disposed over the entirety of the surface of the base body having a spherical shape. This enables a constant sensor sensitivity to be obtained regardless of a direction of a fluid, and the accuracy of detection of a flow rate can be improved.

    FLOW SENSOR
    5.
    发明申请
    FLOW SENSOR 有权

    公开(公告)号：US20220268611A1

    公开(公告)日：2022-08-25

    申请号：US17185584

    申请日：2021-02-25

    Applicant: Flusso Limited

    Inventor： Ethan GARDNER ,  Andrea DE LUCA ,  Florin UDREA

    IPC: G01F1/692 ,  G01F1/684

    Abstract: We disclose herein a sensing device comprising a semiconductor substrate having a first etched portion, a dielectric layer located on or over the semiconductor substrate, wherein the dielectric layer comprises a first dielectric membrane located adjacent to the first etched portion of the semiconductor substrate, a pressure sensing element and/or a flow sensing element within the first dielectric membrane, and a first structure configured to reinforce the dielectric membrane. A first portion of the first structure is located within the first dielectric membrane, the first structure has a higher stiffness than the first dielectric membrane, and the first portion of the first structure is located between a perimeter of the dielectric membrane and the pressure sensing element or flow sensing element.

    THERMAL SENSOR DEVICE
    6.
    发明申请
    THERMAL SENSOR DEVICE 有权

    公开(公告)号：US20220214197A1

    公开(公告)日：2022-07-07

    申请号：US17607441

    申请日：2020-06-09

    Applicant: Hitachi Astemo, Ltd.

    Inventor： Hiroshi NAKANO ,  Masahiro MATSUMOTO ,  Yasuo ONOSE ,  Kazuhiro OHTA

    IPC: G01F1/692 ,  G01N27/18

    Abstract: A thermal sensor device capable of maintaining measurement accuracy for a long period by suppressing plastic deformation due to thermal expansion of the heat generating resistor and reducing resistance change of the heat generating resistor, includes: a substrate having an opening; and a diaphragm having a structure in which a lower film, a heat generating resistor, and an upper film are stacked so as to bridge the opening, in which a film thickness of the lower film is larger than a film thickness of the upper film, an average thermal expansion coefficient of the lower film is larger than an average thermal expansion coefficient of the upper film, the lower film includes a plurality of films having different thermal expansion coefficients, and a film having a largest thermal expansion coefficient among the plurality of films is formed below a thickness center of the lower film.

    Flow-rate sensor
    8.
    发明授权
    Flow-rate sensor 有权

    公开(公告)号：US11353349B2

    公开(公告)日：2022-06-07

    申请号：US17256908

    申请日：2019-06-20

    Applicant: Hitachi Automotive Systems, Ltd.

    Inventor： Hiroki Nakatsuchi ,  Yasuo Onose ,  Takayuki Yogo ,  Ryotaro Shimada

    IPC: G01F1/692 ,  G01F1/38 ,  G01F1/684

    Abstract: A flow-rate sensor is provided with a lead frame, a semiconductor chip that is disposed on one surface of the lead frame, and in which a diaphragm including a void portion on the lead frame side is formed, a flow rate detecting unit that is formed on the one surface including the diaphragm of the semiconductor chip, and resin that includes a flow passage opening portion exposing at least a portion of the flow rate detecting unit formed on the diaphragm, and covers the lead frame and the semiconductor chip. A lower side resin portion of the resin covering another surface side of the lead frame, on an opposite side to the one surface side thereof, has a thinned portion that is thinner than a periphery thereof in a region facing a peripheral edge portion of the diaphragm.

    THERMAL FLOW RATE SENSOR
    9.
    发明申请
    THERMAL FLOW RATE SENSOR 有权

    公开(公告)号：US20220120597A1

    公开(公告)日：2022-04-21

    申请号：US17565049

    申请日：2021-12-29

    Applicant: DENSO CORPORATION

    Inventor： Hajime MASHITA ,  Yasushi KOUNO ,  Jyunzou YAMAGUCHI

    IPC: G01F1/692

    Abstract: A thin film is formed on a substrate on which an opening having two opposite sides are formed, and forms a membrane. The thin film has an upstream temperature sensor and a downstream temperature sensor on both sides of a heater. A heat conductive member covers the two sides and is arranged on both sides of the heater, the upstream temperature sensor, and the downstream temperature sensor so as to promote heat conduction from the heater to the substrate. When an end of the opening on the membrane side is defined as an upper end and an end on the side away from the membrane is defined as a lower end, the heat conductive member covers from the upper end to the lower end of the opening in a normal direction of the membrane.

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