知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

23 条记录 (耗时 0.022 秒)

    METHOD AND SYSTEM FOR GROUP IIIA NITRIDE GROWTH
    1.
    发明申请
    METHOD AND SYSTEM FOR GROUP IIIA NITRIDE GROWTH 有权

    公开(公告)号：US20210296113A1

    公开(公告)日：2021-09-23

    申请号：US17135046

    申请日：2020-12-28

    申请人： Robbie J. Jorgenson

    发明人： Robbie J. Jorgenson

    IPC分类号： H01L21/02

    摘要： A system and method for growing a gallium nitride (GaN) structure that includes providing a template; and growing at least a first GaN layer on the template using a first sputtering process, wherein the first sputtering process includes: controlling a temperature of a sputtering target, and modulating between a gallium-rich condition and a gallium-lean condition, wherein the gallium-rich condition includes a gallium-to-nitrogen ratio having a first value that is greater than 1, and wherein the gallium-lean condition includes the gallium-to-nitrogen ratio having a second value that is less than the first value. Some embodiments include a load lock configured to load a substrate wafer into the system and remove the GaN structure from the system; and a plurality of deposition chambers, wherein the plurality of deposition chambers includes a GaN-deposition chamber configured to grow at least the first GaN layer on a template that includes the substrate wafer.

    GROUP IIIA NITRIDE GROWTH METHOD AND SYSTEM
    2.
    发明申请
    GROUP IIIA NITRIDE GROWTH METHOD AND SYSTEM 审中-公开

    公开(公告)号：US20190385836A1

    公开(公告)日：2019-12-19

    申请号：US16234070

    申请日：2018-12-27

    申请人： Robbie J. Jorgenson

    发明人： Robbie J. Jorgenson

    IPC分类号： H01L21/02

    摘要： A system and method for growing a gallium nitride (GaN) structure that includes providing a template; and growing at least a first GaN layer on the template using a first sputtering process, wherein the first sputtering process includes: controlling a temperature of a sputtering target, and modulating between a gallium-rich condition and a gallium-lean condition, wherein the gallium-rich condition includes a gallium-to-nitrogen ratio having a first value that is greater than 1, and wherein the gallium-lean condition includes the gallium-to-nitrogen ratio having a second value that is less than the first value. Some embodiments include a load lock configured to load a substrate wafer into the system and remove the GaN structure from the system; and a plurality of deposition chambers, wherein the plurality of deposition chambers includes a GaN-deposition chamber configured to grow at least the first GaN layer on a template that includes the substrate wafer.

    MATERIALS AND STRUCTURES FOR OPTICAL AND ELECTRICAL III-NITRIDE SEMICONDUCTOR DEVICES AND METHODS
    6.
    发明申请
    MATERIALS AND STRUCTURES FOR OPTICAL AND ELECTRICAL III-NITRIDE SEMICONDUCTOR DEVICES AND METHODS 有权

    公开(公告)号：US20210296516A1

    公开(公告)日：2021-09-23

    申请号：US17135012

    申请日：2020-12-28

    申请人： Robbie J. Jorgenson

    发明人： Robbie J. Jorgenson

    IPC分类号： H01L31/0304 ,  G02B6/122 ,  B82Y20/00 ,  H01L33/00 ,  H01L33/32 ,  H01L21/02 ,  H01L41/187 ,  H01L29/20 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/06 ,  H01L33/10

    摘要： The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates. In some embodiments, the present invention provides materials, structures, devices, and methods for acoustic wave devices and technology, including epitaxial and non-epitaxial piezoelectric materials and structures useful for acoustic wave devices. In some embodiments, the present invention provides metal-base transistor devices, structures, materials and methods of forming metal-base transistor material structures for use in semiconductor devices.

    METHOD OF FORMING CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE
    9.
    发明申请
    METHOD OF FORMING CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE 有权
    形成电流注入/隧道发光装置的方法

    公开(公告)号：US20110244609A1

    公开(公告)日：2011-10-06

    申请号：US12956640

    申请日：2010-11-30

    申请人： Robbie J. Jorgenson ,  David J. King

    发明人： Robbie J. Jorgenson ,  David J. King

    IPC分类号： H01L33/60 ,  H01L21/20

    CPC分类号： H01L33/105 ,  H01L33/04 ,  H01L33/06 ,  H01L33/405 ,  Y10T29/5313

    摘要： An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.

    摘要翻译： 一种用于制造它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒（TB）结构; 面向TB结构的TB生长外延金属镜（TB-GEMM）结构，其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中，活动区域包括MQW结构。 在一些实施方案中，TB-GEMM包括合金组合物，使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜（可选地为GEMM）。 在一些实施例中，GEMM中的至少一个沉积在衬底上，并且与衬底晶格匹配。

    CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE AND METHOD
    10.
    发明申请
    CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE AND METHOD 有权
    电流注入/隧道发光装置及方法

    公开(公告)号：US20090212278A1

    公开(公告)日：2009-08-27

    申请号：US12393029

    申请日：2009-02-25

    申请人： Robbie J. Jorgenson ,  David J. King

    发明人： Robbie J. Jorgenson ,  David J. King

    IPC分类号： H01L33/00 ,  H05K13/00

    CPC分类号： H01L33/105 ,  H01L33/04 ,  H01L33/06 ,  H01L33/405 ,  Y10T29/5313

    摘要： An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.

    摘要翻译： 一种用于制作它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒（TB）结构; 面向TB结构的TB生长外延金属镜（TB-GEMM）结构，其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中，活动区域包括MQW结构。 在一些实施方案中，TB-GEMM包括合金组合物，使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜（可选地为GEMM）。 在一些实施例中，GEMM中的至少一个沉积在衬底上，并且与衬底晶格匹配。