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    GROUP IIIA NITRIDE GROWTH METHOD AND SYSTEM
    1.
    发明申请
    GROUP IIIA NITRIDE GROWTH METHOD AND SYSTEM 审中-公开

    公开(公告)号：US20190385836A1

    公开(公告)日：2019-12-19

    申请号：US16234070

    申请日：2018-12-27

    申请人： Robbie J. Jorgenson

    发明人： Robbie J. Jorgenson

    IPC分类号： H01L21/02

    摘要： A system and method for growing a gallium nitride (GaN) structure that includes providing a template; and growing at least a first GaN layer on the template using a first sputtering process, wherein the first sputtering process includes: controlling a temperature of a sputtering target, and modulating between a gallium-rich condition and a gallium-lean condition, wherein the gallium-rich condition includes a gallium-to-nitrogen ratio having a first value that is greater than 1, and wherein the gallium-lean condition includes the gallium-to-nitrogen ratio having a second value that is less than the first value. Some embodiments include a load lock configured to load a substrate wafer into the system and remove the GaN structure from the system; and a plurality of deposition chambers, wherein the plurality of deposition chambers includes a GaN-deposition chamber configured to grow at least the first GaN layer on a template that includes the substrate wafer.

    Method and system for group IIIA nitride growth
    5.
    发明授权
    Method and system for group IIIA nitride growth 有权

    公开(公告)号：US11651959B2

    公开(公告)日：2023-05-16

    申请号：US17135046

    申请日：2020-12-28

    申请人： Robbie J. Jorgenson

    发明人： Robbie J. Jorgenson

    IPC分类号： H01L21/02

    CPC分类号： H01L21/0254 ,  H01L21/0257 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631

    摘要： A system and method for growing a gallium nitride (GaN) structure that includes providing a template; and growing at least a first GaN layer on the template using a first sputtering process, wherein the first sputtering process includes: controlling a temperature of a sputtering target, and modulating between a gallium-rich condition and a gallium-lean condition, wherein the gallium-rich condition includes a gallium-to-nitrogen ratio having a first value that is greater than 1, and wherein the gallium-lean condition includes the gallium-to-nitrogen ratio having a second value that is less than the first value. Some embodiments include a load lock configured to load a substrate wafer into the system and remove the GaN structure from the system; and a plurality of deposition chambers, wherein the plurality of deposition chambers includes a GaN-deposition chamber configured to grow at least the first GaN layer on a template that includes the substrate wafer.

    Method of forming current-injecting/tunneling light-emitting device
    9.
    发明授权
    Method of forming current-injecting/tunneling light-emitting device 有权
    形成电流注入/隧道发光器件的方法

    公开(公告)号：US08865492B2

    公开(公告)日：2014-10-21

    申请号：US12956640

    申请日：2010-11-30

    申请人： Robbie J. Jorgenson ,  David J. King

    发明人： Robbie J. Jorgenson ,  David J. King

    IPC分类号： H01L33/60 ,  H01L21/20 ,  H01L33/40 ,  H01L33/10 ,  H01L33/06 ,  H01L33/04

    CPC分类号： H01L33/105 ,  H01L33/04 ,  H01L33/06 ,  H01L33/405 ,  Y10T29/5313

    摘要： An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.

    摘要翻译： 一种用于制造它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒（TB）结构; 面向TB结构的TB生长外延金属镜（TB-GEMM）结构，其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中，活动区域包括MQW结构。 在一些实施方案中，TB-GEMM包括合金组合物，使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜（可选地为GEMM）。 在一些实施例中，GEMM中的至少一个沉积在衬底上，并且与衬底晶格匹配。