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公开(公告)号：US20120043602A1
公开(公告)日：2012-02-23
申请号：US12806203
申请日：2010-01-11
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/0634 , H01L29/0638 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： Improved MOSFET structures and processes, where multiple polysilicon embedded regions are introduced into the n+ source contact area. A top poly Field Plate is used to shield the electric field from penetrating into the channel, so that a very short channel can be used without jeopardizing the device drain-source leakage current. A bottom poly Field Plate is used to modulate the electric field distribution in the drift region such that a more uniform field distribution can be obtained.
摘要翻译： 改进的MOSFET结构和工艺，其中多个多晶硅嵌入区域被引入到n +源极接触区域。 顶部聚场板用于屏蔽电场穿透通道，使得可以使用非常短的通道，而不会危及器件漏源漏电流。 底部多场板用于调制漂移区域中的电场分布，使得可以获得更均匀的场分布。
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公开(公告)号：US08704295B1
公开(公告)日：2014-04-22
申请号：US13212044
申请日：2011-08-17
IPC分类号： H01L29/78
CPC分类号： H01L29/7806 , H01L29/0623 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7813 , H01L29/872
摘要： Power devices which include trench Schottky barrier diodes and also (preferably) trench-gate transistors. Isolation trenches flank both the gate regions and the diode mesas, and have an additional diffusion below the bottom of the isolation trenches. The additional diffusion helps to reduce the electric field (and leakage), when the device is in the OFF state, at both the Schottky barrier and at the body diode.
摘要翻译： 功率器件包括沟道肖特基势垒二极管和（优选）沟槽栅极晶体管。 隔离沟槽面对栅极区域和二极管台面两侧，并且在隔离沟槽底部具有另外的扩散。 当器件处于OFF状态时，附加扩散有助于在肖特基势垒和二极管二极管的同时减小电场（和泄漏）。
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公开(公告)号：US20120098055A1
公开(公告)日：2012-04-26
申请号：US13175975
申请日：2011-07-05
IPC分类号： H01L29/78
CPC分类号： H01L29/7393 , H01L21/26586 , H01L29/0634 , H01L29/0873 , H01L29/0878 , H01L29/1095 , H01L29/167 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/7816
摘要： Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types.
摘要翻译： 功率半导体器件和相关方法，其中多数载流子流被分成平行的流经两个相反导电类型的漂移区域。
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4.发明申请Power MOSFET With Embedded Recessed Field Plate and Methods of Fabrication 有权具有嵌入式嵌入式场板的功率MOSFET及其制造方法公开(公告)号：US20110254088A1
公开(公告)日：2011-10-20
申请号：US13089326
申请日：2011-04-19
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/456 , H01L29/66727 , H01L29/66734
摘要： Semiconductor power devices, and related methods, wherein a recessed contact makes lateral ohmic contact to the source diffusion, but is insulated from the underlying recessed field plate (RFP). Such an insulated RFP is here referred to as an embedded recessed field plate (ERFP).
摘要翻译： 半导体功率器件和相关方法，其中凹陷接触件对源极扩散进行横向欧姆接触，但与下面的凹陷场板（RFP）绝缘。 这种绝缘RFP在这里被称为嵌入式凹入场板（ERFP）。
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5.发明申请POWER SEMICONDUCTOR DEVICES, METHODS, AND STRUCTURES WITH Embedded Dielectric Layers Containing Permanent Charges 有权功率半导体器件，方法和结构与包含永久电荷的嵌入式介电层公开(公告)号：US20110079843A1
公开(公告)日：2011-04-07
申请号：US12759696
申请日：2010-04-13
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L21/26586 , H01L29/0634 , H01L29/0661 , H01L29/0873 , H01L29/0882 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/7802 , H01L29/7813 , H01L29/8611
摘要： Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
摘要翻译： 使用重新焊接的沟槽的功率器件在其侧壁处或附近具有永久电荷。 这些沟槽垂直延伸到漂移区域。
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6.发明授权Power MOSFET with embedded recessed field plate and methods of fabrication 有权具有嵌入式凹面场板的功率MOSFET及其制造方法公开(公告)号：US08581341B2
公开(公告)日：2013-11-12
申请号：US13089326
申请日：2011-04-19
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/456 , H01L29/66727 , H01L29/66734
摘要： Semiconductor power devices, and related methods, wherein a recessed contact makes lateral ohmic contact to the source diffusion, but is insulated from the underlying recessed field plate (RFP). Such an insulated RFP is here referred to as an embedded recessed field plate (ERFP).
摘要翻译： 半导体功率器件和相关方法，其中凹陷接触件对源极扩散进行横向欧姆接触，但与下面的凹陷场板（RFP）绝缘。 这种绝缘RFP在这里被称为嵌入式凹入场板（ERFP）。
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公开(公告)号：US08354711B2
公开(公告)日：2013-01-15
申请号：US12806203
申请日：2010-01-11
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/0634 , H01L29/0638 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： Improved MOSFET structures and processes, where multiple polysilicon embedded regions are introduced into the n+ source contact area. A top poly Field Plate is used to shield the electric field from penetrating into the channel, so that a very short channel can be used without jeopardizing the device drain-source leakage current. A bottom poly Field Plate is used to modulate the electric field distribution in the drift region such that a more uniform field distribution can be obtained.
摘要翻译： 改进的MOSFET结构和工艺，其中多个多晶硅嵌入区域被引入到n +源极接触区域。 顶部聚场板用于屏蔽电场穿透通道，使得可以使用非常短的通道，而不会危及器件漏源漏电流。 底部多场板用于调制漂移区域中的电场分布，使得可以获得更均匀的场分布。
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公开(公告)号：US08319278B1
公开(公告)日：2012-11-27
申请号：US12720856
申请日：2010-03-10
IPC分类号： H01L29/66
CPC分类号： H01L29/7811 , H01L29/0623 , H01L29/0653 , H01L29/086 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/4933 , H01L29/515 , H01L29/66719 , H01L29/66734 , H01L29/7802 , H01L29/7809 , H01L29/7813 , H01L29/7825
摘要： Power semiconductor devices in which insulated empty space zones are used for field-shaping regions, in place of dielectric bodies previously used. Optionally permanent charge is added at the interface between the insulated empty space zone and an adjacent semiconductor drift region.
摘要翻译： 绝缘空间空间区域用于场成形区域的功率半导体器件代替先前使用的介电体。 可选地，在绝缘空间空间区域和相邻半导体漂移区域之间的界面处添加永久电荷。
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9.发明授权Devices, structures, and methods using self-aligned resistive source extensions 有权使用自对准电阻源扩展的器件，结构和方法公开(公告)号：US08310006B2
公开(公告)日：2012-11-13
申请号：US12887303
申请日：2010-09-21
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L21/2255 , H01L29/0839 , H01L29/086 , H01L29/408 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： Devices, structures, and related methods for IGBTs and the like which include a self-aligned series resistance at the source-body junction to avoid latchup. The series resistance is achieved by using a charged dielectric, and/or by using a dielectric which provides a source of dopant atoms of the same conductivity type as the source region, at a sidewall adjacent to the source region.
摘要翻译： IGBT等的器件，结构和相关方法，其包括在源体结处的自对准串联电阻以避免闭锁。 通过使用带电电介质和/或通过使用在与源极区相邻的侧壁处使用提供与源极区相同的导电类型的掺杂剂原子的源的电介质来实现串联电阻。
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10.发明授权Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges 有权具有包含永久电荷的嵌入介质层的功率半导体器件，方法和结构公开(公告)号：US08330213B2
公开(公告)日：2012-12-11
申请号：US12759696
申请日：2010-04-13
IPC分类号： H01L29/423
CPC分类号： H01L29/7811 , H01L21/26586 , H01L29/0634 , H01L29/0661 , H01L29/0873 , H01L29/0882 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/7802 , H01L29/7813 , H01L29/8611
摘要： Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
摘要翻译： 使用重新焊接的沟槽的功率器件在其侧壁处或附近具有永久电荷。 这些沟槽垂直延伸到漂移区域。
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