公开(公告)号：US20170104474A1

公开(公告)日：2017-04-13

申请号：US15387270

申请日：2016-12-21

Applicant: Renesas Electronics Corporation

Inventor： Ryo KANDA ,  Tetsu TODA ,  Junichi NAKAMURA ,  Kazuyuki UMEZU ,  Tomonobu KURIHARA ,  Takahiro NAGATSU ,  Yasushi NAKAHARA ,  Yoshinori KAYA

IPC: H03K3/356 ,  H03K17/567 ,  H01L29/40 ,  H01L29/78 ,  H01L29/06

CPC classification number: H03K3/356182 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/408 ,  H01L29/7823 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4903 ,  H02P27/06 ,  H03K5/24 ,  H03K17/567 ,  H03K17/6872 ,  H03K19/018521

Abstract: A driver integrated circuit includes a bootstrap circuit (BSC) configured to output a boot power supply voltage (VB) based on a first power supply voltage, the boot power supply voltage being higher than the first power supply voltage; a level shift circuit (LSC) configured to output an output pulse signal based on an input pulse signal and the boot power supply voltage; a high side driving circuit (HSU) configured to output a high side driving voltage based on the boot power supply voltage and the output pulse signal, wherein the bootstrap circuit includes a sense metal oxide semiconductor (MOS) transistor and a boot MOS transistor, wherein the sense MOS transistor includes a depression-type transistor.

公开(公告)号：US20160056818A1

公开(公告)日：2016-02-25

申请号：US14832867

申请日：2015-08-21

Applicant: Renesas Electronics Corporation

Inventor： Ryo KANDA ,  Tetsu TODA ,  Junichi NAKAMURA ,  Kazuyuki UMEZU ,  Tomonobu KURIHARA ,  Takahiro NAGATSU ,  Yasushi NAKAHARA ,  Yoshinori KAYA

IPC: H03K17/687 ,  H02P27/06 ,  H03K17/567 ,  H03K19/0185 ,  H03K5/24

CPC classification number: H03K3/356182 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/408 ,  H01L29/7823 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4903 ,  H02P27/06 ,  H03K5/24 ,  H03K17/567 ,  H03K17/6872 ,  H03K19/018521

Abstract: In order to reduce the cost and the like of a power control device including a semiconductor device such as a driver IC, as well as an electronic system, the driver IC includes a high side driver, a level shift circuit, first and second transistors, and a comparator circuit. The first transistor is formed in a termination area. The second transistor is formed in the termination region and is driven by a first power supply voltage. The comparator circuit is formed in a first region to drive the first transistor to be ON when the voltage of a sense node is lower than the first power supply voltage, while driving the first transistor to be OFF when the voltage of the sense node is higher than the first power supply voltage. The second transistor is a depression type transistor.

Abstract translation: 为了降低包括诸如驱动器IC的半导体器件的电力控制装置以及电子系统的成本等，驱动器IC包括高侧驱动器，电平移位电路，第一和第二晶体管， 和比较器电路。 第一晶体管形成在终端区域中。 第二晶体管形成在终端区域中并由第一电源电压驱动。 当感测节点的电压低于第一电源电压时，比较器电路形成在第一区域中以驱动第一晶体管导通，同时当感测节点的电压更高时驱动第一晶体管截止 比第一个电源电压。 第二晶体管是凹陷型晶体管。