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    ELECTRONIC CIRCUIT
    4.
    发明申请
    ELECTRONIC CIRCUIT 有权
    电子电路

    公开(公告)号：US20160112043A1

    公开(公告)日：2016-04-21

    申请号：US14893808

    申请日：2014-06-10

    申请人： ROHM CO., LTD.

    发明人： Masashi HAYASHIGUCHI ,  Kazuhide INO

    IPC分类号： H03K17/687 ,  H03K17/08

    CPC分类号： H03K17/6872 ,  H02M1/08 ,  H02M2001/0029 ,  H03K17/08 ,  H03K17/08122 ,  H03K17/122

    摘要： Provided is an electronic circuit capable of preventing a switching device from breakage when a short-circuit occurs. When a gate control signal CG1 is inverted from an L level to an H level, a first switching circuit 32 selects a first input terminal a, and connects an output terminal d to the first input terminal a, whereby turning on a MOSFET 21. When a predetermined time Tx elapses after the output terminal d of the first switching circuit 32 is connected to the first input terminal a, a second switching circuit 34 selects a first input terminal e, and connects an output terminal g to the first input terminal e. Furthermore, immediately after the connection, the first switching circuit 32 selects a second input terminal b, and connects the output terminal d to the second input terminal b. Consequently, immediately after the MOSFET 21 is turned on, a gate resistor is switched from a first gate resistor 33 having a small resistance value to a second gate resistor 35 having a large resistance value.

    摘要翻译： 提供一种电子电路，能够防止开关装置发生短路时的破损。 当门控制信号CG1从​​L电平反相到H电平时，第一开关电路32选择第一输入端子a，并将输出端子d连接到第一输入端子a，由此导通MOSFET 21.当 在第一开关电路32的输出端子d连接到第一输入端子a之后经过预定时间Tx，第二开关电路34选择第一输入端子e，并将输出端子g连接到第一输入端子e。 此外，在连接之后，第一开关电路32选择第二输入端子b，并将输出端子d连接到第二输入端子b。 因此，在MOSFET21导通之后，栅极电阻从具有小电阻值的第一栅极电阻器33切换到具有大电阻值的第二栅极电阻器35。

    ELECTRONIC CIRCUIT
    5.
    发明申请
    ELECTRONIC CIRCUIT 有权
    电子电路

    公开(公告)号：US20150311779A1

    公开(公告)日：2015-10-29

    申请号：US14439184

    申请日：2013-10-30

    申请人： ROHM CO., LTD.

    发明人： Masashi HAYASHIGUCHI ,  Mineo MIURA ,  Kazuhide INO

    IPC分类号： H02M1/32 ,  H02M7/217

    CPC分类号： H02M1/32 ,  H02M1/088 ,  H02M7/217 ,  H03K17/04123 ,  H03K17/08122 ,  H03K17/0822 ,  H03K17/122 ,  H03K17/163 ,  H03K2217/0045

    摘要： When an overcurrent is detected by an overcurrent detecting circuit (36), a first switch circuit (32) selects a second input terminal (b) and connects an output terminal (c) to the second input terminal (b), with the result that the output terminal (c) of the first switch circuit (32) is put into a high-impedance state. The second switch circuit (34) selects a second output terminal (f) and connects an input terminal (d) to the second output terminal (f), with the result that the input terminal (d) of the second switch circuit (34) is grounded. That is, the gate of a first MOSFET (21) is grounded via a current interrupting resistor (35). The resistance value of the current interrupting resistor (35) is set so that, at the time of a current interruption, a time interval from a time when the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

    摘要翻译： 当过电流检测电路（36）检测到过电流时，第一开关电路（32）选择第二输入端子（b）并将输出端子（c）连接到第二输入端子（b），结果是 第一开关电路（32）的输出端（c）处于高阻态。 第二开关电路（34）选择第二输出端子（f）并将输入端子（d）连接到第二输出端子（f），结果是第二开关电路（34）的输入端子（d） 接地。 也就是说，第一MOSFET（21）的栅极通过电流中断电阻（35）接地。 电流中断电阻器（35）的电阻值被设定为使得在电流中断时，从切换装置的栅极 - 源极电压或栅极 - 发射极间电压降低到这样的电压的时间间隔 开关器件的导通电阻的温度特性在开关器件的漏极电流或集电极电流达到其饱和电流的2％为500 [nsec]以下的时刻变为负。