公开(公告)号：US3843425A

公开(公告)日：1974-10-22

申请号：US29521272

申请日：1972-10-05

Applicant: RCA CORP

Inventor： KATNACK F

IPC: H01L21/00 ,  H01L23/482 ,  H01L29/00 ,  H01L7/64

CPC classification number: H01L21/00 ,  H01L23/4824 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/085 ,  Y10S148/122 ,  H01L2924/00

Abstract: 1. A METHOD FOR MAKING A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF: PROVIDING A SEMICONDUCTOR BODY HAVING A REGION OF A FIRST CONDUCTIVITY-TYPE THEREIN ADJACENT ONE SURFACE OF THE BODY, WITH AN INSULATING COATING ON SAID SURFACE; FORMING A COMMUNICATING SLOT IN SAID COATING WHICH EXTENDS TO SAID SURFACE; FORMING A SEMICONDUCTOR LAYER OF SAID FIRST CONDUCTIVITY TYPE IN SAID SLOT WHICH CONTACTS SAID REGION; DIFFUSING IMPURITIES OF SAID ONE CONDUCTIVITY-TYPE INTO SAID SEMICONDUCTOR LAYER SO THAT SAID LAYER IS HIGHLY CONDUCTIVE WITH RESPECT TO SAID REGION; AND DIFFUSING A PLURALITY OF SEGMENTS OF A SECOND CONDUCTIVITY-TYPE INTO SAID REGION FROM SAID SURFACE IS SPACED RELATION TO SAID SEMICONDUCTOR LAYER.