Invention Grant
US3843425A Overlay transistor employing highly conductive semiconductor grid and method for making
失效
采用高导电半导体网格的覆盖晶体管和制作方法
- Patent Title: Overlay transistor employing highly conductive semiconductor grid and method for making
- Patent Title (中): 采用高导电半导体网格的覆盖晶体管和制作方法
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Application No.: US29521272Application Date: 1972-10-05
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Publication No.: US3843425APublication Date: 1974-10-22
- Inventor: KATNACK F
- Applicant: RCA CORP
- Assignee: RCA Corp
- Current Assignee: RCA Corp
- Priority: US29521272 1972-10-05; US13134271 1971-04-05
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/482 ; H01L29/00 ; H01L7/64
Abstract:
1. A METHOD FOR MAKING A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF: PROVIDING A SEMICONDUCTOR BODY HAVING A REGION OF A FIRST CONDUCTIVITY-TYPE THEREIN ADJACENT ONE SURFACE OF THE BODY, WITH AN INSULATING COATING ON SAID SURFACE; FORMING A COMMUNICATING SLOT IN SAID COATING WHICH EXTENDS TO SAID SURFACE; FORMING A SEMICONDUCTOR LAYER OF SAID FIRST CONDUCTIVITY TYPE IN SAID SLOT WHICH CONTACTS SAID REGION; DIFFUSING IMPURITIES OF SAID ONE CONDUCTIVITY-TYPE INTO SAID SEMICONDUCTOR LAYER SO THAT SAID LAYER IS HIGHLY CONDUCTIVE WITH RESPECT TO SAID REGION; AND DIFFUSING A PLURALITY OF SEGMENTS OF A SECOND CONDUCTIVITY-TYPE INTO SAID REGION FROM SAID SURFACE IS SPACED RELATION TO SAID SEMICONDUCTOR LAYER.
Public/Granted literature
- USD767213S1 Helmet mounted visor Public/Granted day:2016-09-20
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