公开(公告)号：US11244895B2

公开(公告)日：2022-02-08

申请号：US16889645

申请日：2020-06-01

Applicant: QUALCOMM Incorporated

Inventor： Ramesh Manchana ,  Sudheer Chowdary Gali ,  Biswa Ranjan Panda ,  Dhaval Sejpal ,  Stanley Seungchul Song

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/06 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L49/02

Abstract: A substrate tie cell on an IC is provided. The substrate tie cell includes a diffusion region. The diffusion region is a p-type diffusion region on or within a p-type substrate, an n-type diffusion region on or within an n-type well within a p-type substrate, an n-type diffusion region on or within an n-type substrate, or a p-type diffusion region on or within a p-type well within an n-type substrate. The substrate tie cell further includes a plurality of adjacent gate interconnects (n adjacent gate interconnects) extending over the diffusion region, where n≥4. The diffusion region is configured to be at one of a first voltage or a second voltage, and the gate interconnects are configured to be at an other of the first voltage or the second voltage. In one configuration, the first voltage is a power supply voltage and the second voltage is a ground voltage.

公开(公告)号：US10992277B1

公开(公告)日：2021-04-27

申请号：US16785464

申请日：2020-02-07

Applicant: QUALCOMM Incorporated

Inventor： Li Sun ,  Dong Ren ,  Hao Liu ,  Sudheer Chowdary Gali

IPC: H03F3/19 ,  H03G3/30 ,  H03G5/16 ,  H04L25/03 ,  H03F3/45

Abstract: Certain aspects are directed to an amplifier. The amplifier generally includes a first transistor having a gate coupled to an input node of the amplifier, a source degeneration circuit, and a second transistor coupled between the source degeneration circuit and a source of the first transistor, a gate of the second transistor being configured to receive a gain control signal from a controller.