公开(公告)号：US10163884B1

公开(公告)日：2018-12-25

申请号：US15667576

申请日：2017-08-02

Applicant: QUALCOMM Incorporated

Inventor： Harikrishna Chintarlapalli Reddy ,  Jonathan Holland ,  Sajin Mohamad

IPC: H01L27/02 ,  G06F17/50 ,  H03K19/00 ,  H01L27/118 ,  H03K19/177 ,  H01L23/522

Abstract: An IC includes an array of cells and a first set of endcap cells. The array of cells includes a first set of Mx layer power interconnects coupled to a first voltage, a first set of Mx layer interconnects, a second set of Mx layer power interconnects coupled to a second voltage source, and a second set of Mx layer interconnects. The first set of endcap cells includes first and second sets of Mx+1 layer interconnects. The first set of Mx+1 layer interconnects is coupled to the first set of Mx layer power interconnects and to the second set of Mx layer interconnects to provide a first set of decoupling capacitors. The second set of Mx+1 layer interconnects is coupled to the second set of Mx layer power interconnects and to the first set of Mx layer interconnects to provide a second set of decoupling capacitors.

公开(公告)号：US10978437B2

公开(公告)日：2021-04-13

申请号：US16456311

申请日：2019-06-28

Applicant: QUALCOMM Incorporated

Inventor： Jonathan Holland ,  Jeffrey Charles Lee ,  Chulkyu Lee ,  Harikrishna Chintarlapalli Reddy

IPC: H01L27/02 ,  H01L27/06 ,  H01L23/528 ,  H03K17/687 ,  H03F3/45 ,  H01L29/78 ,  H01L49/02

Abstract: An integrated circuit, comprising a transistor-based cell comprising a set of fin field effect transistors (Fin FETs) chained together in a first direction, wherein the set of Fin FETs include fins extending longitudinally along the first direction and equally-spaced apart in a second direction orthogonal to the first direction by a fin pitch, and a set of polysilicon gates extending longitudinally along the second direction and equally-spaced apart in the first direction by a poly pitch, wherein a first dimension of the transistor-based cell along the first direction is substantially a first integer multiplied by the poly pitch, and wherein a second dimension of the transistor-based cell along the second direction is substantially a second integer multiplied by the fin pitch. The integrated circuit may include other non-transistor-based cells (e.g., passive cells), such as thin-film resistor or capacitor cells, which are arranged in a two-dimensional array with the transistor-based cell.