公开(公告)号：US20230370085A1

公开(公告)日：2023-11-16

申请号：US17740465

申请日：2022-05-10

Applicant: QUALCOMM Incorporated

Inventor： Lei SUN ,  Aram AKHAVAN ,  Behnam SEDIGHI ,  Tszwing CHOI ,  Henry LAU

IPC: H03M1/80 ,  H01L23/522 ,  H01L49/02 ,  H01G4/38

CPC classification number: H03M1/802 ,  H01L23/5223 ,  H01L28/86 ,  H01G4/38

Abstract: A capacitor device comprises a semiconductor substrate with multiple metal layers above the substrate. a first metal layer has a first plurality of bottom terminals elongated in a first direction, and a first plurality of top terminals, electrically coupled to each other, elongated in the first direction and interleaved with the first plurality of bottom terminals. A second metal layer between the semiconductor substrate and the first metal layer has a second plurality of bottom terminals elongated in the first direction, and a second plurality of top terminals, electrically coupled to each other and the first plurality of top terminals, elongated in the first direction and interleaved with the second plurality of bottom terminals.