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公开(公告)号：US20240346969A1
公开(公告)日：2024-10-17
申请号：US18389782
申请日：2023-12-20
发明人： Yun-Li Li , Kuan-Yung Liao , Sheng-Yuan Sun , Yi-Ching Chen , Zong Huei Tsai
CPC分类号： G09G3/007 , G09G3/32 , G09G2300/023 , G09G2320/028 , G09G2340/0407 , G09G2340/10 , G09G2356/00 , G09G2360/16
摘要： A multi-layer display module includes a first display panel, and a second display panel. Dimension of long side of the first display panel is D1, and the first display panel has first pixel resolution P1. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space d between the first display panel and the second display panel. Dimension of the long side of the second display panel is D2, and the second display panel has the second pixel resolution P2. Transmittance of the second display panel is T2. The multi-layer display module complies with T2>40%, P1≠P2, and
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公开(公告)号：US11810500B2
公开(公告)日：2023-11-07
申请号：US17850432
申请日：2022-06-27
发明人： Kuan-Yung Liao , Yi-Ching Chen
CPC分类号： G09G3/32 , H01L27/156 , G09G2320/0233
摘要： A micro LED display panel and a pixel driving circuit thereof. The pixel driving circuit is used for driving a light-emitting unit, which includes a plurality of micro LEDs connected in series. The pixel driving circuit includes a switch unit, a driving unit and a selection unit. The switch unit controls a data signal input according to a scan signal. The driving unit is electrically connected to the switch unit and the light-emitting unit, and is electrically connected to a first voltage. The selection unit receives a selection signal and is electrically connected to a second voltage. The selection unit is electrically connected to the micro LEDs and the driving unit. The number and brightness of the micro LEDs to be turned on are controlled by the selection unit and the driving unit according to the selection signal and the data signal.
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公开(公告)号：US20230223498A1
公开(公告)日：2023-07-13
申请号：US18185388
申请日：2023-03-17
发明人： Yi-Chun Shih , Pei-Hsin Chen , Yi-Ching Chen
CPC分类号： H01L33/382 , H01L33/44
摘要： A micro light emitting diode includes an epitaxial structure, a first electrode, a second electrode, at least one via and an insulating layer. The epitaxial structure has a surface and includes a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer. The first electrode and the second electrode are respectively disposed on the surface of the epitaxial structure. The second electrode is located outside around the first electrode and symmetrically disposed with respect to a geometric center of a bonding surface of the epitaxial structure. The via extends from the second-type semiconductor layer to the first-type semiconductor layer. The insulating layer is disposed on the second-type semiconductor layer together with the first electrode. The insulating layer extends to cover an inner wall of the via, and the via is non-symmetrically disposed with respect to the geometric center of the bonding surface of the epitaxial structure.
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公开(公告)号：US11211535B2
公开(公告)日：2021-12-28
申请号：US16727502
申请日：2019-12-26
发明人： Yi-Ching Chen , Pei-Hsin Chen , Yi-Chun Shih , Tzu-Yang Lin , Yu-Hung Lai
IPC分类号： H01L33/62 , H01L21/683 , H01L25/075 , H01L21/66
摘要： A method for fabricating a micro light-emitting diode display is provided. The method includes disposing a plurality of micro light-emitting diodes on a carrier; transferring the micro light-emitting diodes from the carrier to a display substrate and disposing the micro light-emitting diodes in a plurality of pixels of the display substrate; subjecting the micro light-emitting diodes to a pre-bonding process to electrically connect the micro light-emitting diodes to the display substrate; subjecting the micro light-emitting diodes pre-bonded to the display substrate to a first detection process, thereby identifying whether a faulty micro light-emitting diode is present or not; and, subjecting the micro light-emitting diodes to the main bonding process after the first detection process.
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公开(公告)号：US20210135054A1
公开(公告)日：2021-05-06
申请号：US16689102
申请日：2019-11-20
发明人： Yu-Chu Li , Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen
IPC分类号： H01L33/38 , H01L33/62 , H01L25/075
摘要： An electrode structure includes a first electrode and a second electrode disposed opposite to each other. The first electrode has a first side and a second side. The second side is located between the first side and the second electrode. The first electrode has a maximum vertical length and a minimum vertical length from the first side to the second side, and a ratio of the minimum vertical length to the maximum vertical length is less than 0.8. The second electrode and the first electrode are separated by a first vertical gap and a second vertical gap, and the second vertical gap is greater than the first vertical gap.
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公开(公告)号：US11705441B2
公开(公告)日：2023-07-18
申请号：US17359679
申请日：2021-06-28
发明人： Sheng-Yuan Sun , Ying-Tsang Liu , Yi-Ching Chen , Pei-Hsin Chen , Yi-Chun Shih , Tzu-Yang Lin , Yu-Hung Lai
IPC分类号： H01L25/075 , H01L27/15
CPC分类号： H01L25/0753 , H01L25/075 , H01L27/153 , H01L27/156
摘要： A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.
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公开(公告)号：US11626549B2
公开(公告)日：2023-04-11
申请号：US17002790
申请日：2020-08-26
发明人： Yi-Ching Chen , Yi-Chun Shih , Pei-Hsin Chen
摘要： A micro light-emitting device display apparatus includes a circuit substrate, at least one micro light-emitting device, and at least one conductive bump. The circuit substrate includes at least one pad. The micro light-emitting device is disposed on the circuit substrate and includes at least one electrode. At least one of the pad and the electrode has at least one closed opening. The conductive bump is disposed between the circuit substrate and the micro light-emitting device. The conductive bump extends into the closed opening and defines at least one void with the closed opening. The electrode of the micro light-emitting device is electrically connected to the pad of the circuit substrate with the conductive bump.
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公开(公告)号：US11094677B2
公开(公告)日：2021-08-17
申请号：US16677672
申请日：2019-11-08
发明人： Sheng-Yuan Sun , Ying-Tsang Liu , Yi-Ching Chen , Pei-Hsin Chen , Yi-Chun Shih , Tzu-Yang Lin , Yu-Hung Lai
IPC分类号： H01L25/075 , H01L27/15
摘要： A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.
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公开(公告)号：US10937826B2
公开(公告)日：2021-03-02
申请号：US16436333
申请日：2019-06-10
发明人： Ying-Tsang Liu , Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen , Yu-Chu Li , Huan-Pu Chang , Tzu-Yang Lin , Yu-Hung Lai
摘要： A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.
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公开(公告)号：US20200176509A1
公开(公告)日：2020-06-04
申请号：US16436333
申请日：2019-06-10
发明人： Ying-Tsang Liu , Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen , Yu-Chu Li , Huan-Pu Chang , Tzu-Yang Lin , Yu-Hung Lai
摘要： A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.
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