- 专利标题: MICRO SEMICONDUCTOR STRUCTURE
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申请号: US16436333申请日: 2019-06-10
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公开(公告)号: US20200176509A1公开(公告)日: 2020-06-04
- 发明人: Ying-Tsang Liu , Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen , Yu-Chu Li , Huan-Pu Chang , Tzu-Yang Lin , Yu-Hung Lai
- 申请人: PlayNitride Display Co., Ltd.
- 申请人地址: TW Zhunan Township
- 专利权人: PlayNitride Display Co., Ltd.
- 当前专利权人: PlayNitride Display Co., Ltd.
- 当前专利权人地址: TW Zhunan Township
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3af718c8
- 主分类号: H01L27/15
- IPC分类号: H01L27/15 ; H01L33/36
摘要:
A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.
公开/授权文献
- US10937826B2 Micro semiconductor structure 公开/授权日:2021-03-02
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