公开(公告)号：US08456258B2

公开(公告)日：2013-06-04

申请号：US12783095

申请日：2010-05-19

Applicant: Perceval Coudrain ,  David Petit

Inventor： Perceval Coudrain ,  David Petit

IPC: H03H9/54

CPC classification number: H03H9/173 ,  H03H3/04 ,  H03H2003/021 ,  Y10T29/42

Abstract: A resonant device including a stack of a first metal layer, a piezoelectric material layer, and a second metal layer formed on a silicon substrate, a cavity being formed in depth in the substrate, the thickness of the silicon above the cavity having at least a first value in a first region located opposite to the center of the stack, having a second value in a second region located under the periphery of the stack and having at least a third value in a third region surrounding the second region, the second value being greater than the first and the third values.

Abstract translation: 一种谐振装置，包括第一金属层，压电材料层和形成在硅衬底上的第二金属层的堆叠，空腔在衬底中深度形成，空腔上方的硅的厚度至少具有 第一值位于与堆叠的中心相对的第一区域中，在位于堆叠的周边下方的第二区域中具有第二值，并且在围绕第二区域的第三区域中具有至少第三值，第二值为 大于第一和第三值。

公开(公告)号：US20100295631A1

公开(公告)日：2010-11-25

申请号：US12783095

申请日：2010-05-19

Applicant: Perceval Coudrain ,  David Petit

Inventor： Perceval Coudrain ,  David Petit

IPC: H03H9/17 ,  H01L41/22

CPC classification number: H03H9/173 ,  H03H3/04 ,  H03H2003/021 ,  Y10T29/42

Abstract: A resonant device including a stack of a first metal layer, a piezoelectric material layer, and a second metal layer formed on a silicon substrate, a cavity being formed in depth in the substrate, the thickness of the silicon above the cavity having at least a first value in a first region located opposite to the center of the stack, having a second value in a second region located under the periphery of the stack and having at least a third value in a third region surrounding the second region, the second value being greater than the first and the third values.

Abstract translation: 一种谐振装置，包括第一金属层，压电材料层和形成在硅衬底上的第二金属层的堆叠，空腔在衬底中深度形成，空腔上方的硅的厚度至少具有 第一值位于与堆叠的中心相对的第一区域中，在位于堆叠的周边下方的第二区域中具有第二值，并且在围绕第二区域的第三区域中具有至少第三值，第二值为 大于第一和第三值。

公开(公告)号：US09506587B2

公开(公告)日：2016-11-29

申请号：US13002773

申请日：2009-07-06

Applicant: David Petit

Inventor： David Petit

IPC: F16L39/04 ,  F16L27/04 ,  B64D37/00 ,  B64D37/20 ,  F16L25/01 ,  F16L27/073

CPC classification number: F16L27/044 ,  B64D37/005 ,  B64D37/20 ,  F16L25/01 ,  F16L27/073 ,  F16L39/04

Abstract: A connector for connecting a pipe, such as a fuel pipe, to another fuel pipe or pipe terminal, having a first connector element including a first female sub-element and a concentric second female sub-element, a first seal seat positioned within the first female sub-element, a second seal seat positioned in the concentric second female sub-element, a first seal retained within the first seal seat, a second seal retained the second seal seat, and a second connector element providing a connection for a pipe at one end and connection to the first connector element at a second end.

Abstract translation: 用于将诸如燃料管的管连接到另一燃料管或管终端的连接器，具有包括第一阴子元件和同心第二阴子元件的第一连接器元件，位于第一 阴性子元件，位于同心的第二阴性子元件中的第二密封座，保持在第一密封座内的第一密封件，保持第二密封座的第二密封件，以及提供用于管道的连接的第二连接器元件 一端并在第二端连接到第一连接器元件。

公开(公告)号：US20110080687A1

公开(公告)日：2011-04-07

申请号：US12896093

申请日：2010-10-01

Applicant: Pierre Bar ,  Sylvain Joblot ,  David Petit

Inventor： Pierre Bar ,  Sylvain Joblot ,  David Petit

IPC: H01G4/228

CPC classification number: H03H3/04 ,  H01G4/228 ,  H01G4/255 ,  H01G13/06 ,  H01L22/14 ,  H01L22/20 ,  H01L28/60 ,  H01L2924/0002 ,  Y10T29/43 ,  Y10T29/49004 ,  H01L2924/00

Abstract: A method of adjustment in the manufacture of a capacitance of a capacitor supported by a substrate, the method including the steps of: a) forming a first electrode parallel to the surface of the substrate and covering it with a dielectric layer; b) forming, on a first portion of the dielectric layer, a second electrode; c) measuring the capacitance between the first electrode and the second electrode, and deducing therefrom the capacitance to be added to obtain the desired capacitance; d) thinning down a second portion of the dielectric layer, which is not covered by the second electrode, so that the thickness of this second portion is adapted to the forming of the deduced capacitance; and e) forming a third electrode on the thinned-down portion and connecting it to the second electrode.

Abstract translation: 一种调整由衬底支撑的电容器的电容的制造方法，所述方法包括以下步骤：a）形成平行于衬底表面并用电介质层覆盖的第一电极; b）在所述电介质层的第一部分上形成第二电极; c）测量第一电极和第二电极之间的电容，并从其中推导出要加入的电容以获得所需电容; d）使未被第二电极覆盖的电介质层的第二部分变薄，使得该第二部分的厚度适于形成推导的电容; 以及e）在所述减薄部分上形成第三电极并将其连接到所述第二电极。

公开(公告)号：US20110080233A1

公开(公告)日：2011-04-07

申请号：US12896382

申请日：2010-10-01

Applicant: David Petit ,  Sylvain Joblot ,  Pierre Bar ,  Jean-Francois Carpentier ,  Pierre Dautriche

Inventor： David Petit ,  Sylvain Joblot ,  Pierre Bar ,  Jean-Francois Carpentier ,  Pierre Dautriche

IPC: H03H9/17 ,  H01L41/22

CPC classification number: H03H3/02 ,  G01N29/022 ,  G02F1/133707 ,  H03H3/04 ,  H03H9/0028 ,  H03H9/02102 ,  H03H9/175 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.

Abstract translation: 一种制造晶片的方法，其上形成有谐振器，每个谐振器包括在半导体衬底上方的一叠层，其从衬底表面依次包括：布拉格反射镜; 由具有与所有其它堆叠层相反的符号的声速的温度系数的材料制成的补偿层; 和压电谐振器，该方法包括以下连续步骤：a）沉积补偿层; 和b）由于沉积方法而减小补偿层的厚度不等式，使得该层在每个谐振器的电平上具有相同的厚度，优于2％以内，优选在1％以内。

公开(公告)号：US20110298554A1

公开(公告)日：2011-12-08

申请号：US13159244

申请日：2011-06-13

Applicant: Pierre Bar ,  Sylvain Joblot ,  David Petit

Inventor： Pierre Bar ,  Sylvain Joblot ,  David Petit

IPC: H03B5/30 ,  H01G7/00

CPC classification number: H01G4/228 ,  H01G4/255 ,  H01G13/06 ,  H01L22/14 ,  H01L22/20 ,  H01L28/60 ,  H01L2924/0002 ,  H03H3/04 ,  H03H9/0542 ,  H03H2003/0464 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49156 ,  H01L2924/00

Abstract: A method of adjustment during manufacture of a capacitance of a capacitor supported by a substrate, the method including the steps of: a) forming a first electrode parallel to the surface of the substrate and covering it with a dielectric layer; b) forming, on a first portion of the dielectric layer, a second electrode; c) measuring the electrical signal between the first electrode and the second electrode, and deducing therefrom the capacitance to be added to obtain the desired capacitance; d) thinning down a second portion of the dielectric layer, which is not covered by the second electrode, so that the thickness of this second portion is adapted to the forming of the deduced capacitance; and e) forming a third electrode on the thinned-down portion and connecting it to the second electrode.

Abstract translation: 一种在由衬底支撑的电容器的电容制造过程中进行调节的方法，所述方法包括以下步骤：a）形成平行于衬底表面并用介电层覆盖的第一电极; b）在所述电介质层的第一部分上形成第二电极; c）测量第一电极和第二电极之间的电信号，并从其中推导出待加电容以获得所需电容; d）使未被第二电极覆盖的电介质层的第二部分变薄，使得该第二部分的厚度适于形成推导的电容; 以及e）在所述减薄部分上形成第三电极并将其连接到所述第二电极。

公开(公告)号：US20110115214A1

公开(公告)日：2011-05-19

申请号：US13002773

申请日：2009-07-06

Applicant: David Petit

Inventor： David Petit

IPC: F16L27/073 ,  F16L39/04

CPC classification number: F16L27/044 ,  B64D37/005 ,  B64D37/20 ,  F16L25/01 ,  F16L27/073 ,  F16L39/04

Abstract: A connector for connecting a pipe, such as a fuel pipe, to another fuel pipe or pipe terminal.

Abstract translation: 用于将诸如燃料管的管连接到另一燃料管或管终端的连接器。

公开(公告)号：US20110080232A1

公开(公告)日：2011-04-07

申请号：US12896361

申请日：2010-10-01

Applicant: Pierre Bar ,  Sylvain Joblot ,  David Petit ,  Jean-Francois Carpentier

Inventor： Pierre Bar ,  Sylvain Joblot ,  David Petit ,  Jean-Francois Carpentier

IPC: H03H9/15 ,  H01L41/22

CPC classification number: H03H3/02 ,  H03H9/175 ,  H03H2003/025

Abstract: A method for manufacturing a bulk acoustic wave resonator, each resonator including: above a substrate, a piezoelectric resonator, and next to the piezoelectric resonator, a contact pad connected to an electrode of the piezoelectric resonator; and, between the piezoelectric resonator and the substrate, a Bragg mirror including at least one conductive layer extending between the pad and the substrate and at least one upper silicon oxide layer extending between the pad and the substrate, the method including the steps of: depositing the upper silicon oxide layer; and decreasing the thickness unevenness of the upper silicon oxide layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each pad.

Abstract translation: 一种制造体声波谐振器的方法，每个谐振器包括：在基板上方，压电谐振器上方，并且紧邻压电谐振器，连接到压电谐振器的电极的接触焊盘; 并且在所述压电谐振器和所述基板之间，布拉格反射镜包括在所述焊盘和所述衬底之间延伸的至少一个导电层和在所述焊盘和所述衬底之间延伸的至少一个上部氧化硅层，所述方法包括以下步骤： 上氧化硅层; 并且由于沉积方法而减小上部氧化硅层的厚度不均匀性，使得该层在每个焊盘的水平处具有相同的厚度，优于2％以内，优选在1％以内。

公开(公告)号：US08593234B2

公开(公告)日：2013-11-26

申请号：US12896361

申请日：2010-10-01

Applicant: Pierre Bar ,  Sylvain Joblot ,  David Petit ,  Jean-Francois Carpentier

Inventor： Pierre Bar ,  Sylvain Joblot ,  David Petit ,  Jean-Francois Carpentier

IPC: H03H9/15 ,  H03H9/05 ,  H03H9/54

CPC classification number: H03H3/02 ,  H03H9/175 ,  H03H2003/025

Abstract: A method for manufacturing a bulk acoustic wave resonator, each resonator including: above a substrate, a piezoelectric resonator, and next to the piezoelectric resonator, a contact pad connected to an electrode of the piezoelectric resonator; and, between the piezoelectric resonator and the substrate, a Bragg mirror including at least one conductive layer extending between the pad and the substrate and at least one upper silicon oxide layer extending between the pad and the substrate, the method including the steps of: depositing the upper silicon oxide layer; and decreasing the thickness unevenness of the upper silicon oxide layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each pad.

Abstract translation: 一种制造体声波谐振器的方法，每个谐振器包括：在基板上方，压电谐振器上方，并且紧邻压电谐振器，连接到压电谐振器的电极的接触焊盘; 并且在所述压电谐振器和所述基板之间，布拉格反射镜包括在所述焊盘和所述衬底之间延伸的至少一个导电层和在所述焊盘和所述衬底之间延伸的至少一个上部氧化硅层，所述方法包括以下步骤： 上氧化硅层; 并且由于沉积方法而减小上部氧化硅层的厚度不均匀性，使得该层在每个焊盘的水平处具有相同的厚度，优于2％以内，优选在1％以内。

公开(公告)号：US08172272B2

公开(公告)日：2012-05-08

申请号：US11992947

申请日：2006-10-06

Applicant: David Petit ,  Anthony John Bryant

Inventor： David Petit ,  Anthony John Bryant

IPC: F16L27/12 ,  F16L39/04

CPC classification number: F16L39/005 ,  B64D37/14 ,  F16L25/01 ,  F16L39/04 ,  F16L2201/30

Abstract: A coupling for fuel pipe includes a pipe end fitting, which includes a male outer surface including a groove and a female inner surface including a groove. The coupling includes a double-walled socket including a female outer socket and a male inner shaft. The pipe end fitting is accommodated in the region between the female outer socket and the male inner shaft. A first seal ring seals between the female inner surface and the male inner shaft. A second seal ring, which may be substantially coplanar with the first, seals between the male outer surface and the female outer socket of the double-walled socket. The coupling may be so arranged that the pipe end fitting and the double-walled socket are able to pivot relative to each other by up to at least ±2 degrees and are able to slide both towards and apart from each other.

Abstract translation: 用于燃料管的联接器包括管端配件，该管端配件包括包括槽的阳外表面和包括凹槽的阴内表面。 联轴器包括一个双壁插座，它包括一个阴外插座和一个公内螺纹。 管端配件容纳在阴外插座和阳内轴之间的区域中。 第一密封环在阴内表面和阳内轴之间密封。 可以与第一密封环基本共面的第二密封环密封在双壁插座的阳外表面和阴外插座之间。 联接器可以被布置成使得管端配件和双壁插座能够相对于彼此枢转高达至少±2度并且能够彼此朝向和相互滑动。