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    Method for minimizing the corner effect by densifying the insulating layer
    1.
    发明授权
    Method for minimizing the corner effect by densifying the insulating layer 有权
    通过使绝缘层致密化来最小化拐角效应的方法

    公开(公告)号：US07838443B2

    公开(公告)日：2010-11-23

    申请号：US11771657

    申请日：2007-06-29

    Applicant: Patrick Schiavone ,  Frédéric Gaillard

    Inventor： Patrick Schiavone ,  Frédéric Gaillard

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: H01L21/76224

    Abstract: The invention concerns a method for minimizing “corner” effects in shallow silicon oxide trenches, by densifying the silicon oxide layer after it has been deposited in the trenches. Said densification is preferably carried out by irradiating the layer under luminous radiation with weak wavelength.

    Abstract translation: 本发明涉及一种通过在氧化硅沉积在沟槽中之后使氧化硅层致密化来最小化浅氧化硅沟槽中的“拐角”效应的方法。 所述致密化优选通过在弱波长的发光下照射该层进行。

    Method for minimizing corner effect by densifying the insulating layer
    2.
    发明授权
    Method for minimizing corner effect by densifying the insulating layer 失效
    通过使绝缘层致密化来减小角落效应的方法

    公开(公告)号：US07259112B1

    公开(公告)日：2007-08-21

    申请号：US09462716

    申请日：1998-07-08

    Applicant: Patrick Schiavone ,  Frédéric Gaillard

    Inventor： Patrick Schiavone ,  Frédéric Gaillard

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: H01L21/76224

    Abstract: The invention concerns a method for minimizing “corner” effects in shallow silicon oxide trenches, by densifying the silicon oxide layer after it has been deposited in the trenches. Said densification is preferably carried out by irradiating the layer under luminous radiation with weak wavelength.

    Abstract translation: 本发明涉及一种通过在氧化硅沉积在沟槽中之后使氧化硅层致密化来最小化浅氧化硅沟槽中的“拐角”效应的方法。 所述致密化优选通过在弱波长的发光下照射该层进行。

    Method of forming a sion antireflection film which is noncontaminating with respect to deep-uv photoresists
    3.
    发明授权
    Method of forming a sion antireflection film which is noncontaminating with respect to deep-uv photoresists 失效
    形成相对于深紫外光刻胶不污染的抗反射膜的方法

    公开(公告)号：US06528341B1

    公开(公告)日：2003-03-04

    申请号：US09806808

    申请日：2001-07-18

    Applicant: Patrick Schiavone ,  Frédéric Gaillard

    Inventor： Patrick Schiavone ,  Frédéric Gaillard

    IPC: H01L2100

    CPC classification number: H01L21/0276 ,  G02B1/113 ,  G03F7/091 ,  Y10S438/954

    Abstract: A method of forming a silicon oxynitride antireflection film which is noncontaminating with respect to deep-ultraviolet photoresists (DUV photoresists) on each of a series of silicon semiconductor substrates successively introduced into the same reactor chamber includes a step of plasma-enhanced chemical vapor deposition (PECVD) of a silicon oxynitride antireflection film and treatment of the antireflection film with an oxygen plasma. The reactor chamber is cleaned before the successive introduction of each of the substrates by purging the reactor chamber using an oxygen-free gas plasma and then depositing a silicon oxynitride blanket by plasma-enhanced chemical vapor deposition using precursor gases.

    Abstract translation: 在连续导入同一反应室的一系列硅半导体基板中的每一个上形成相对于深紫外光致抗蚀剂（DUV光致抗蚀剂）不污染的氮氧化硅抗反射膜的方法包括等离子体增强化学气相沉积 PECVD）和氧等离子体的防反射膜的处理。 在通过使用无氧气体等离子体清洗反应器室然后通过使用前体气体的等离子体增强化学气相沉积沉积氮氧化硅覆盖层来连续引入每个基板之前，清洁反应室。

    Method for correcting electronic proximity effects using off-center scattering functions
    4.
    发明授权
    Method for correcting electronic proximity effects using off-center scattering functions 有权
    使用偏心散射函数校正电子邻近效应的方法

    公开(公告)号：US09224577B2

    公开(公告)日：2015-12-29

    申请号：US13587598

    申请日：2012-08-16

    Applicant: Patrick Schiavone ,  Thiago Figueiro

    Inventor： Patrick Schiavone ,  Thiago Figueiro

    IPC: H01J37/31 ,  H01J37/317 ,  H01J3/12 ,  G03F7/20 ,  H01J37/22 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2061 ,  H01J3/12 ,  H01J37/222 ,  H01J2229/563 ,  H01J2237/226 ,  H01J2237/31769

    Abstract: A method for projecting an electron beam, used notably in direct or indirect writing lithography and in electronic microscopy. Proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. For this, the convolution of a point spread function with the geometry of the target is conventionally used. At least one of the components of the point spread function has its maximum value not located on the center of the beam. Preferably, the maximum value is instead located on the backward scattering peak. Advantageously, the point spread function uses gamma distribution laws.

    Abstract translation: 一种用于投射电子束的方法，特别用于直接或间接写入光刻和电子显微镜。 必须校正通过与靶相互作用的光束的电子的向前和向后散射产生的接近效应。 为此，通常使用点扩散函数与目标几何的卷积。 点扩散函数的至少一个分量的最大值不在波束的中心。 优选地，最大值代替地位于后向散射峰上。 有利地，点扩散函数使用伽马分布规律。

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