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公开(公告)号:US20210364458A1
公开(公告)日:2021-11-25
申请号:US17396653
申请日:2021-08-06
Inventor: KUNIHIKO NAKAMURA , MASAKI FUJIKANE , KOUHEI TAKAHASHI , NAOKI TAMBO , YASUYUKI NAITO
Abstract: A gas sensor includes a substrate, a support layer, a base layer, a heater layer disposed on or above the base layer, a gas sensing layer that is disposed on or above one of the heater layer and the base layer and that has a gas concentration dependent electrical impedance, and a detection electrode that is electrically connected to the gas sensing layer and that detects the impedance of the gas sensing layer. The substrate has a cavity and an opening formed by the cavity. The support layer is disposed on the substrate so as to cover at least an entire periphery of the opening. The base layer is supported by the support layer above the cavity so as to be separated from the substrate. A portion of the support layer in contact with the cavity has a first phononic crystal structure structured by a plurality of regularly arranged through-holes.
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公开(公告)号:US20210313504A1
公开(公告)日:2021-10-07
申请号:US17349730
申请日:2021-06-16
Inventor: MASAKI FUJIKANE , NAOKI TAMBO , KUNIHIKO NAKAMURA , KOUHEI TAKAHASHI , YASUYUKI NAITO
Abstract: The present disclosure provides a novel multilayer body. The multilayer body of the present disclosure includes a first phononic crystal layer and a second phononic crystal layer disposed on or above the first phononic crystal layer. The first phononic crystal layer has a first phononic crystal structure including a plurality of regularly arranged first through holes. The second phononic crystal layer has a second phononic crystal structure including a plurality of regularly arranged second through holes. The through direction of the plurality of first through holes in the first phononic crystal layer is substantially parallel to the through direction of the plurality of second through holes in the second phononic crystal layer.
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公开(公告)号:US20210302237A1
公开(公告)日:2021-09-30
申请号:US17347470
申请日:2021-06-14
Inventor: KOUHEI TAKAHASHI , NAOKI TAMBO , KUNIHIKO NAKAMURA , MASAKI FUJIKANE , YASUYUKI NAITO
Abstract: An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.
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公开(公告)号:US20210302236A1
公开(公告)日:2021-09-30
申请号:US17347467
申请日:2021-06-14
Inventor: KOUHEI TAKAHASHI , NAOKI TAMBO , KUNIHIKO NAKAMURA , MASAKI FUJIKANE , YASUYUKI NAITO
Abstract: Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.
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公开(公告)号:US20220216388A1
公开(公告)日:2022-07-07
申请号:US17702859
申请日:2022-03-24
Inventor: MASAKI FUJIKANE , KOUHEI TAKAHASHI , NAOKI TAMBO , KUNIHIKO NAKAMURA , YASUYUKI NAITO
Abstract: A thermoelectric conversion device includes: an insulating layer; and a thermoelectric conversion module disposed on the insulating layer. The thermoelectric conversion module has a first thermoelectric conversion region and a second thermoelectric conversion region. The first(second) thermoelectric conversion region includes one or two or more thermoelectric conversion elements, a first(third) connection electrode, and a second(fourth) connection electrode. The thermoelectric conversion elements of the first(second) thermoelectric conversion region are electrically connected to the first(third) connection electrode and the second(fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes. A through direction of the plurality of through holes in this crystal structure is substantially parallel to a direction perpendicular to a principal surface of the insulating layer.
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公开(公告)号:US20210313505A1
公开(公告)日:2021-10-07
申请号:US17349738
申请日:2021-06-16
Inventor: MASAKI FUJIKANE , NAOKI TAMBO , KUNIHIKO NAKAMURA , KOUHEI TAKAHASHI , YASUYUKI NAITO
Abstract: A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.
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公开(公告)号:US20180320670A1
公开(公告)日:2018-11-08
申请号:US16038809
申请日:2018-07-18
Inventor: YURIKO KANEKO , MAKI HIRAOKA , KUNIHIKO NAKAMURA
CPC classification number: F03G7/005 , H01L41/04 , H01L41/042 , H01L41/09 , H01L41/092 , H01L41/18 , H01L41/193 , H02N2/04 , H02N2/06 , H02N11/00
Abstract: The actuator device according to the present invention comprises an actuator and an AC power supply capable of applying a high-frequency voltage to the actuator. The actuator comprises a flexible tube formed of a polymer, an inner electrode, and an outer electrode. In a cross section perpendicular to a longitudinal direction of the flexible tube, the inner electrode is in contact with at least a part of an inner periphery of the flexible tube. In the cross section, a part of an outer periphery of the flexible tube is coated with the outer electrode. In operation, the AC power supply applies a high-frequency voltage having a frequency of not less than 1 MHz to the actuator to deform the actuator in a direction from the inner electrode toward the outer electrode in the cross section. The AC power supply stops the application of the high-frequency voltage to the actuator to return the actuator to the original position thereof.
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公开(公告)号:US20240264004A1
公开(公告)日:2024-08-08
申请号:US18641274
申请日:2024-04-19
Inventor: NAOKI TAMBO , KUNIHIKO NAKAMURA , MASAKI FUJIKANE , HIROYUKI TANAKA
CPC classification number: G01J5/22 , G01J5/48 , H10N19/00 , G01J2005/202
Abstract: An infrared sensor according to the present disclosure includes an output pixel, and a switcher. The output pixel includes infrared photodetectors. The switcher switches each of the infrared photodetectors between a first state and a second state independently with a predetermined period P. In the first state, the infrared photodetector is able to change in temperature in response to receiving infrared radiation. In the second state, the infrared photodetector is maintained at a predetermined temperature. Switching of the infrared photodetectors from the second state S2 to the first state S1 is executed sequentially in the period P at a predetermined time interval ti. The output pixel includes N infrared photodetectors. The time interval ti divided by the period P is greater than or equal to 1/(N+1) and less than or equal to 1/(N−1).
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公开(公告)号:US20240060824A1
公开(公告)日:2024-02-22
申请号:US18496368
申请日:2023-10-27
Inventor: KOUHEI TAKAHASHI , MASAKI FUJIKANE , KUNIHIKO NAKAMURA , ATSUSHI HIMENO , NAOKI TAMBO , YUKI NAKATA , HIROYUKI TANAKA
Abstract: An infrared sensor according to the present disclosure includes a transistor, a cavity layer, and a sensor layer. The cavity layer includes a cavity. The sensor layer includes a phononic crystal in which holes are arranged. In plan view, the infrared sensor includes a first region and a second region. The first region includes a transistor. The second region includes the cavity. The cavity layer includes a flat major surface. The major surface is disposed around the cavity, and extends across both the first region and the second region. The sensor layer is disposed on the major surface.
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公开(公告)号:US20230088920A1
公开(公告)日:2023-03-23
申请号:US18051548
申请日:2022-11-01
Inventor: NAOKI TAMBO , MASAKI FUJIKANE , KUNIHIKO NAKAMURA , KOSEI OHURA , YASUYUKI NAITO
Abstract: An infrared sensor is provided with an infrared light receiver, a signal pathway, and a first member. The infrared light receiver has a structure in which at least two materials having different coefficients of thermal expansion are layered. The signal pathway includes a first signal pathway allowing passage of a driving signal to be applied to the infrared light receiver. The driving signal has a current value equal to or greater than a prescribed magnitude, and the infrared light receiver deforms in response to the application of the driving signal to the infrared light receiver, thereby at least a portion of the infrared light receiver contacting the first member.
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