公开(公告)号：US20240060824A1

公开(公告)日：2024-02-22

申请号：US18496368

申请日：2023-10-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KOUHEI TAKAHASHI ,  MASAKI FUJIKANE ,  KUNIHIKO NAKAMURA ,  ATSUSHI HIMENO ,  NAOKI TAMBO ,  YUKI NAKATA ,  HIROYUKI TANAKA

IPC: G01J5/12 ,  G01J5/02

CPC classification number: G01J5/12 ,  G01J5/024 ,  G01J5/20

Abstract: An infrared sensor according to the present disclosure includes a transistor, a cavity layer, and a sensor layer. The cavity layer includes a cavity. The sensor layer includes a phononic crystal in which holes are arranged. In plan view, the infrared sensor includes a first region and a second region. The first region includes a transistor. The second region includes the cavity. The cavity layer includes a flat major surface. The major surface is disposed around the cavity, and extends across both the first region and the second region. The sensor layer is disposed on the major surface.

公开(公告)号：US20150171142A1

公开(公告)日：2015-06-18

申请号：US14559914

申请日：2014-12-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIO KAWASHIMA ,  YUKIO HAYAKAWA ,  ATSUSHI HIMENO

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1675

Abstract: A nonvolatile memory device includes an insulating layer, oxygen diffusion prevention layers disposed on the insulating layer, a plurality of contact plugs, each of the plurality of the contact plugs penetrating through each of the plurality of the oxygen diffusion prevention layers and at least a part of the insulating layer, and a plurality of resistance-variable elements, each of the plurality of the resistance-variable elements covering each of the plurality of the contact plugs exposed on surfaces of the oxygen diffusion prevention layers and being electrically connected to each of the plurality of the contact plugs Each of the oxygen diffusion prevention layers is provided only between the insulating layer and each of the plurality of the resistance-variable elements to correspond to each of the plurality of the contact plugs arranged for each of the plurality of the resistance-variable elements.

Abstract translation: 非易失性存储器件包括绝缘层，设置在绝缘层上的氧扩散防止层，多个接触插塞，多个接触插塞中的每一个穿透多个氧扩散防止层中的每一个，以及至少一部分 和多个电阻可变元件，所述多个电阻可变元件中的每一个覆盖在所述氧扩散防止层的表面上暴露的所述多个所述接触插塞中的每一个，并且电连接到所述绝缘层 多个接触插塞每个氧扩散防止层仅设置在绝缘层和多个电阻可变元件中的每一个之间，以对应于为多个电阻中的每一个布置的多个接触插塞中的每一个 可变元素