公开(公告)号：US20230100196A1

公开(公告)日：2023-03-30

申请号：US18071876

申请日：2022-11-30

Applicant: POSTECH Research and Business Development Foundation

Inventor： Rock Hyun BAEK ,  Jun Sik YOON ,  Jin Su JEONG ,  Seung Hwan LEE

IPC: H01L29/08 ,  H01L29/10 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: Disclosed is a fin field-effect transistor having size-reduced source/drain regions so that a merging phenomenon of epitaxial structures between transistors in a layout is prevented, thus increasing the number of transistors per unit area, and so that an additional mask process is not required, thus maintain processing costs without change, and a method of manufacturing the same.

公开(公告)号：US20200243644A1

公开(公告)日：2020-07-30

申请号：US16750292

申请日：2020-01-23

Applicant: POSTECH Research and Business Development Foundation

Inventor： Rock Hyun BAEK ,  Jun Sik YOON ,  Jin Su JEONG ,  Seung Hwan LEE

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66

Abstract: Disclosed is a field effect transistor including an insulating film disposed between a source/drain region and a substrate. Since the insulating film prevents current leakage under a channel, it is not necessary to form a punch-through stopper. Further disclosed is a method of forming a field effect transistor.