公开(公告)号：US20240282839A1

公开(公告)日：2024-08-22

申请号：US18367854

申请日：2023-09-13

申请人： POSTECH Research and Business Development Foundation

发明人： Rock-Hyun Baek ,  Sang Uk Lee

IPC分类号： H01L29/423 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/42392 ,  H01L29/0673 ,  H01L29/1083 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696 ,  H01L29/0603

摘要： A gate-all-around field effect transistor with an extended source/drain and a method of manufacturing the same. The gate-all-around field effect transistor has an extended source/drain structure formed by partial etching of channels to solve unbalance between semiconductor devices and enables high speed operation through reduction in RC delay.