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公开(公告)号：US20240371986A1
公开(公告)日：2024-11-07
申请号：US18654150
申请日：2024-05-03
Inventor： Young Jae PARK , Seong Jun KIM , Hoon Kyu SHIN , Gil Ho LEE , Chae Gun LEE , Seung Hyun SHIN
Abstract: Embodiments of the present disclosure relate to a quantum device including moderate fluorinated graphene and a method for fabricating the same. According to an exemplary embodiment of the present disclosure, there is provided a quantum device including moderate fluorinated graphene, the quantum device including a substrate, a first insulating layer located on the substrate, a graphene layer located on the first insulating layer, and a second insulating layer located on the graphene layer and covering a third region excluding a first region and second region on both sides of the graphene layer, in which the first region and second region of the graphene layer are formed of moderate fluorinated graphene, and a metal layer is formed on the first region and the second region, and the metal layer makes contact at some locations on the moderate fluorinated graphene.
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公开(公告)号：US20240196761A1
公开(公告)日：2024-06-13
申请号：US18533756
申请日：2023-12-08
Inventor： Gil Ho LEE , Jong Yun LEE
CPC classification number: H10N60/805 , H10N60/0912 , H10N60/12
Abstract: A van der Waals stacked Josephson junction structure and a method for fabricating the same are provided. The van der Waals stacked Josephson junction structure according to an embodiment of the present disclosure includes a substrate, a first layer of a van der Waals material separable into layers and positioned on the substrate, and a second layer of the van der Waals material positioned on the first layer, in which the first layer and the second layer are twisted at a predetermined angle with each other, and a Josephson junction is formed between the first layer and the second layer.
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