公开(公告)号：US20160005599A1

公开(公告)日：2016-01-07

申请号：US14768265

申请日：2014-02-18

Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Tae-Woo LEE ,  Sung-Yong MIN

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/786 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/06 ,  H01L31/18 ,  H01L33/00 ,  H01L33/28 ,  H01L33/26 ,  H01L33/24 ,  H01S5/30 ,  H01L41/37 ,  H01L41/187 ,  H01L29/24

CPC classification number: H01L21/02565 ,  B82Y40/00 ,  H01L21/02554 ,  H01L21/02587 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/02636 ,  H01L27/1225 ,  H01L29/0673 ,  H01L29/24 ,  H01L29/775 ,  H01L29/7869 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/035281 ,  H01L31/06 ,  H01L31/18 ,  H01L31/1828 ,  H01L41/082

Abstract: A method for forming an aligned oxide semiconductor wire pattern includes: dissolving an oxide semiconductor precursor and an organic polymer in distilled water or an organic solvent to provide a composite solution of an oxide semiconductor precursor/organic polymer; continuously discharging the composite solution of the oxide semiconductor precursor/organic polymer in a vertical upper direction from a substrate to align an oxide semiconductor precursor/organic polymer composite wire on the substrate; and heating the oxide semiconductor precursor/organic polymer composite wire to remove the organic polymer and converting the oxide semiconductor precursor into an oxide semiconductor to form an aligned oxide semiconductor wire pattern.

Abstract translation: 形成对准的氧化物半导体线图案的方法包括：将氧化物半导体前体和有机聚合物溶解在蒸馏水或有机溶剂中以提供氧化物半导体前体/有机聚合物的复合溶液; 在衬底上沿上下方向连续排出氧化物半导体前体/有机聚合物的复合溶液，以将氧化物半导体前体/有机聚合物复合线对准在衬底上; 并加热氧化物半导体前体/有机聚合物复合线以除去有机聚合物并将氧化物半导体前体转化为氧化物半导体以形成排列的氧化物半导体布线图案。