公开(公告)号：US20240171834A1

公开(公告)日：2024-05-23

申请号：US18425939

申请日：2024-01-29

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshiki USUI ,  Takeshi HARADA ,  Masayuki YOSHIE ,  Kouichi KAWAMOTO ,  Ken NAKAMURA ,  Tadafumi KUROGI ,  Kazufumi TAKESHITA ,  Kenichi KUWAYAMA

IPC: H04N23/52 ,  B60R1/20 ,  H04N23/51

CPC classification number: H04N23/52 ,  B60R1/20 ,  H04N23/51

Abstract: A vehicular camera includes a first shield made of metal and disposed to surround a circuit board. The first shield includes a first bottom surface portion, a second bottom surface portion disposed to be separated from the first bottom surface portion, and a connection portion connecting an entire periphery of the first bottom surface portion and an entire periphery of the second bottom surface portion. At least a first side surface portion, a second side surface portion, a third side surface portion, and a fourth side surface portion of the first shield are formed by a contiguously curved surface, and at least the first side surface portion, the second side surface portion, the third side surface portion, the fourth side surface portion, the first bottom surface portion, the connection portion, and the second bottom surface portion are formed by a contiguously curved surface.

公开(公告)号：US20170133500A1

公开(公告)日：2017-05-11

申请号：US15415663

申请日：2017-01-25

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Ryuuji ETOU ,  Takeshi HARADA ,  Masakazu HAMADA ,  Tamotsu SHIBATA

IPC: H01L29/778 ,  H01L29/808 ,  H01L29/20 ,  H01L29/04 ,  H01L21/283 ,  H01L29/66 ,  H01L27/098 ,  H01L29/812

CPC classification number: H01L29/7787 ,  H01L21/28 ,  H01L21/283 ,  H01L27/098 ,  H01L29/045 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/808 ,  H01L29/812

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate, a p-type GaN layer formed on a main surface of the substrate and made of AlxInyGa1-x-yN containing p-type impurities, where 0≦X

公开(公告)号：US20180218910A1

公开(公告)日：2018-08-02

申请号：US15926636

申请日：2018-03-20

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Takeshi HARADA ,  Koji UTAKA

IPC: H01L21/28 ,  H01L27/098 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812

CPC classification number: H01L21/28 ,  H01L21/28575 ,  H01L27/098 ,  H01L29/0684 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/417 ,  H01L29/423 ,  H01L29/452 ,  H01L29/49 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/808 ,  H01L29/812

Abstract: A semiconductor device includes: a substrate; a p-type GaN layer that is formed above the substrate, and includes GaN containing p-type impurities; and a Ti film formed on a surface of the p-type GaN layer. The Ti film includes a Ti film containing no nitrogen and a nitrogen-containing Ti film that is less chemically active than such Ti film. The nitrogen-containing Ti film continuously surrounds an outer periphery of the Ti film containing no nitrogen in a planar view.