公开(公告)号：US20150103856A1

公开(公告)日：2015-04-16

申请号：US14580190

申请日：2014-12-22

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Hiroyuki HAGINO ,  Shinji YOSHIDA ,  Kiyoshi MORIMOTO

IPC: H01S5/022 ,  H01S5/343 ,  H01S5/024 ,  H01S5/40

CPC classification number: H01S5/02212 ,  H01L33/483 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01S5/02228 ,  H01S5/02244 ,  H01S5/02276 ,  H01S5/02288 ,  H01S5/02469 ,  H01S5/34333 ,  H01S5/4025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A nitride semiconductor light emitting device includes a nitride semiconductor light emitting element and a package in which the nitride semiconductor light emitting element is accommodated. The package includes a base table in which openings are formed, a cap defining an accommodation space for accommodating the nitride semiconductor light emitting element together with the base table, lead pins passing through the openings and electrically connected to the nitride semiconductor light emitting element, and insulating members embedded in the openings to insulate the base table from the lead pins. At least parts of the insulating members which are located on an accommodation space side are made of a first insulating material containing no Si—O bond.

Abstract translation: 氮化物半导体发光器件包括氮化物半导体发光元件和容纳氮化物半导体发光元件的封装。 所述包装包括形成有开口的基台，限定用于将氮化物半导体发光元件与基台一起容纳的容纳空间的盖，穿过开口并与氮化物半导体发光元件电连接的引脚，以及 嵌入在开口中的绝缘构件将基台与导销绝缘。 位于容纳空间侧的绝缘构件的至少一部分由不含Si-O键的第一绝缘材料制成。

公开(公告)号：US20210031789A1

公开(公告)日：2021-02-04

申请号：US16980222

申请日：2019-03-13

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yuta MORIURA ,  Yoshitaka NAKAMURA ,  Yasufumi KAWAI ,  Hiroyuki HANDA ,  Yohei MORISHITA ,  Toru OKINO ,  Hiroyuki HAGINO ,  Toru SAKURAGAWA ,  Satoshi MORISHITA

IPC: B60W50/00 ,  B60N2/02 ,  A61B5/11 ,  A61M21/02 ,  B60H3/00 ,  B60H1/00 ,  A61B5/16 ,  B60W50/14 ,  A61M21/00 ,  A61B5/024

Abstract: A travel sickness estimation system includes an estimation unit and an output unit. The estimation unit is configured to perform estimation processing of estimating, based on person information indicating conditions of a person who is on board a moving vehicle, whether or not the person is in circumstances that would cause travel sickness for him or her. The output unit is configured to output a result of the estimation processing performed by the estimation unit.

公开(公告)号：US20160284936A1

公开(公告)日：2016-09-29

申请号：US15174525

申请日：2016-06-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya SAMONJI ,  Kazuhiko YAMANAKA ,  Shinji YOSHIDA ,  Hiroyuki HAGINO

IPC: H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01S5/02 ,  H01S5/024 ,  H01S5/042 ,  H01S5/022 ,  H01S5/343 ,  H01S5/323 ,  H01L33/06 ,  H01S5/20

CPC classification number: H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/145 ,  H01L33/16 ,  H01L33/32 ,  H01L33/483 ,  H01L33/64 ,  H01L33/641 ,  H01L2224/48091 ,  H01S5/0206 ,  H01S5/02212 ,  H01S5/0226 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

公开(公告)号：US20150108518A1

公开(公告)日：2015-04-23

申请号：US14550145

申请日：2014-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya SAMONJI ,  Kazuhiko YAMANAKA ,  Shinji YOSHIDA ,  Hiroyuki HAGINO

IPC: H01L33/32 ,  H01L33/48 ,  H01L33/64

CPC classification number: H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/145 ,  H01L33/16 ,  H01L33/32 ,  H01L33/483 ,  H01L33/64 ,  H01L33/641 ,  H01L2224/48091 ,  H01S5/0206 ,  H01S5/02212 ,  H01S5/0226 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract translation: 半导体发光器件包括：氮化物半导体发光元件，其包括具有极性或半极性表面的氮化物半导体衬底和层叠在极性或半极性表面上的氮化物半导体多层膜; 以及安装该元件的安装部。 氮化物半导体多层膜包括电子阻挡层。 电子阻挡层具有比氮化物半导体衬底更小的晶格常数。 安装部分至少包括第一安装部分基部。 第一安装部分基座靠近氮化物半导体发光元件。 第一安装部分底座具有比氮化物半导体多层膜更低的热膨胀系数。 第一安装部分基底具有比氮化物半导体多层膜低的热导率。