公开(公告)号：US11658277B2

公开(公告)日：2023-05-23

申请号：US17366747

申请日：2021-07-02

申请人： OSRAM OLED GmbH

发明人： Guido Weiss ,  Christoph Schwarzmaier ,  Dominik Scholz ,  Nicole Heitzer

IPC分类号： H01L33/62 ,  H01L23/00 ,  H01L33/60 ,  C25D7/12

CPC分类号： H01L33/62 ,  C25D7/123 ,  H01L24/11 ,  H01L24/13 ,  H01L33/60 ,  H01L2224/1147 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13166 ,  H01L2224/13211 ,  H01L2224/13218 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13269 ,  H01L2924/0103 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2933/0058 ,  H01L2933/0066

摘要： A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer, applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer and wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.

公开(公告)号：US20210336111A1

公开(公告)日：2021-10-28

申请号：US17366747

申请日：2021-07-02

申请人： OSRAM OLED GmbH

发明人： Guido Weiss ,  Christoph Schwarzmaier ,  Dominik Scholz ,  Nicole Heitzer

IPC分类号： H01L33/62 ,  C25D7/12 ,  H01L23/00 ,  H01L33/60

摘要： A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer, applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer and wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.

公开(公告)号：US11094866B2

公开(公告)日：2021-08-17

申请号：US16495219

申请日：2018-03-20

申请人： OSRAM OLED GMBH

发明人： Guido Weiss ,  Christoph Schwarzmaier ,  Dominik Scholz ,  Nicole Heitzer

IPC分类号： H01L33/62 ,  H01L23/00 ,  H01L33/60 ,  C25D7/12

摘要： A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.

公开(公告)号：US20200274031A1

公开(公告)日：2020-08-27

申请号：US16753366

申请日：2018-09-26

申请人： Osram OLED GmbH

发明人： Christoph Schwarzmaier ,  Martin Mandl ,  Robert Walter ,  Roland Stieglmeier ,  Michael Schmal

IPC分类号： H01L33/40 ,  H01L33/00 ,  H01L33/46

摘要： A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.