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公开(公告)号：US11658277B2
公开(公告)日：2023-05-23
申请号：US17366747
申请日：2021-07-02
申请人： OSRAM OLED GmbH
CPC分类号： H01L33/62 , C25D7/123 , H01L24/11 , H01L24/13 , H01L33/60 , H01L2224/1147 , H01L2224/11462 , H01L2224/13082 , H01L2224/13166 , H01L2224/13211 , H01L2224/13218 , H01L2224/13224 , H01L2224/13239 , H01L2224/13244 , H01L2224/13247 , H01L2224/13269 , H01L2924/0103 , H01L2924/014 , H01L2924/0105 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2933/0058 , H01L2933/0066
摘要： A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer, applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer and wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.
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公开(公告)号：US10651338B2
公开(公告)日：2020-05-12
申请号：US15759972
申请日：2016-10-04
申请人： OSRAM OLED GMBH
发明人： Dominik Scholz
IPC分类号： H01L33/00 , H01L31/0203 , H01L31/0304 , H01L31/18 , H01L33/32 , H01L33/54 , H01L21/683 , H01L31/0352 , H01L33/06 , H01L33/62
摘要： A method for fabricating an optoelectronic semiconductor component is disclosed. A semiconductor chip is produced by singularizing a wafer. The semiconductor chip comprises a substrate and a semiconductor layer sequence with an active layer applied to a main side of the substrate. The semiconductor layer sequence has an active region for emission or absorption of radiation and a sacrificial region arranged next to the active region. The sacrificial region in the finished semiconductor component is not intended to emit or absorb radiation. A trench, introduced into the semiconductor layer sequence, penetrates the active layer and separates the active region from the sacrificial region. The semiconductor chip with the semiconductor layer sequence is applied on a carrier. The substrate is detached from the active region of the semiconductor layer sequence. In the sacrificial region, the semiconductor layer sequence remains mechanically connected to the substrate.
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公开(公告)号：US10923400B2
公开(公告)日：2021-02-16
申请号：US16068051
申请日：2017-01-24
申请人： OSRAM OLED GMBH
发明人： Sophia Huppmann , Dominik Scholz , Simeon Katz
摘要： The invention relates to a method for producing a plurality of components (100), wherein a carrier composite (10) is provided with a coherent base body (13) and a wafer composite (200) is provided with a coherent semiconductor body composite (20) and a substrate (9). The wafer composite is connected to the carrier composite to form a common composite. In a subsequent method step, a plurality of separation channels (60) are generated at least through the base body (13) to form a grid structure (6), which determines the dimensions of the components (100) to be produced. A passivation layer (61) is shaped in such a way that it covers the side surfaces of the separation channels (60). Finally, the common composite is separated, wherein the substrate (9) is removed from the semiconductor body composite (20) and the common composite is separated along the separation channels (60) to form a plurality of components (100).
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4.发明申请公开(公告)号：US20200158870A1
公开(公告)日：2020-05-21
申请号：US16626480
申请日：2018-06-28
申请人： OSRAM OLED GmbH
IPC分类号： G01S17/10 , G01S7/484 , G01S7/4863 , G01S7/481
摘要： An optical distance measuring device and a method for operating an optical distance measuring device are disclosed. In an embodiment an optical distance measuring device includes a pixelated radiation source with at least two pixels, a radiation detector configured to detect electromagnetic radiation emitted by the radiation source and reflected in measuring regions and a control unit configured to operate the radiation source and to receive electrical signals from the radiation detector, wherein the pixelated radiation source is configured to illuminate different measuring regions with electromagnetic radiation with pairwise different properties.
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公开(公告)号：US20210028223A1
公开(公告)日：2021-01-28
申请号：US17040084
申请日：2019-03-22
申请人： Osram OLED GmbH
IPC分类号： H01L27/15
摘要： An optoelectronic semiconductor component may have a semiconductor body comprising a first region of an n-type conductivity, a second region of a p-type conductivity, an active region capable of generating electromagnetic radiation, a marker layer, a plurality of emission regions and a plurality of recesses. The active region is disposed between the first region and the second region in a plane parallel to the main extension plane of the semiconductor body. The recesses delimit the emission regions in lateral direction. Starting from the side of the first region facing away from the active region, the recesses extend transversely to the main plane of the semiconductor body in the direction of the second region and adjoin the marker layer or penetrate the marker layer completely. The recesses are formed only in the first region or the recesses extend into the second region and completely penetrate the active region.
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公开(公告)号：US10811579B2
公开(公告)日：2020-10-20
申请号：US16073605
申请日：2017-01-26
申请人： OSRAM OLED GmbH
发明人： Dominik Scholz , Siegfried Herrmann
摘要： An optoelectronic component includes a light emitting semiconductor chip, including an emission side and comprising an underside, wherein the optoelectronic component is configured to emit light via the emission side, the optoelectronic component including an insulating layer, the light emitting semiconductor chip is embedded into the insulating layer, the light emitting semiconductor chip including two electrical contact locations, the contact locations face away from the emission side, a first and a second electrically conductive contact layer are provided, respectively, an electrically conductive contact layer electrically conductively connects to a contact location of the semiconductor chip, the electrically conductive contact layers are arranged in the insulating layer, the first electrically conductive contact layer adjoins a first side face of the optoelectronic component, and the second electrically conductive contact layer adjoins a second side face of the optoelectronic component.
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公开(公告)号：US11644538B2
公开(公告)日：2023-05-09
申请号：US16626480
申请日：2018-06-28
申请人： OSRAM OLED GmbH
IPC分类号： G01S7/481 , G01S7/484 , G01S7/4863 , G01S17/10 , G01S17/89
CPC分类号： G01S7/4815 , G01S7/484 , G01S7/4816 , G01S7/4863 , G01S17/10 , G01S17/89
摘要： An optical distance measuring device and a method for operating an optical distance measuring device are disclosed. In an embodiment an optical distance measuring device includes a pixelated radiation source with at least two pixels, a radiation detector configured to detect electromagnetic radiation emitted by the radiation source and reflected in measuring regions and a control unit configured to operate the radiation source and to receive electrical signals from the radiation detector, wherein the pixelated radiation source is configured to illuminate different measuring regions with electromagnetic radiation with pairwise different properties.
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公开(公告)号：US20210336111A1
公开(公告)日：2021-10-28
申请号：US17366747
申请日：2021-07-02
申请人： OSRAM OLED GmbH
摘要： A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer, applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer and wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.
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公开(公告)号：US11094866B2
公开(公告)日：2021-08-17
申请号：US16495219
申请日：2018-03-20
申请人： OSRAM OLED GMBH
摘要： A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.
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