公开(公告)号：US08835317B2

公开(公告)日：2014-09-16

申请号：US13888077

申请日：2013-05-06

Applicant: Novellus Systems, Inc.

Inventor： Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek ,  Aaron R. Fellis ,  Sean Chang

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/768 ,  H01L21/285 ,  H01L21/3213

CPC classification number: H01L21/486 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76865 ,  H01L21/76877

Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.

Abstract translation: 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。