公开(公告)号：US07869888B2

公开(公告)日：2011-01-11

申请号：US11754643

申请日：2007-05-29

申请人： Noriaki Koyama ,  Minoru Obata ,  Wenling Wang

发明人： Noriaki Koyama ,  Minoru Obata ,  Wenling Wang

IPC分类号： G05B13/02 ,  G06F19/00

CPC分类号： G05B23/0221 ,  G05B2219/32184 ,  G05B2219/32192 ,  G05B2219/45031 ,  Y02P90/22

摘要： A information processing apparatus 100 for processing an acquired value, which is a value acquired in regard to a state during a treatment, performed by a semiconductor manufacturing apparatus 200 for performing a treatment on a treatment target containing a semiconductor according to a set value, which is a value for setting a condition of a treatment, includes: a set value receiving portion 101 for receiving the set value; a state value receiving portion 102 for receiving the acquired value; a correction amount calculating portion 103 for calculating a correction amount of the acquired value, using a correction function indicating a relationship between the set value and the acquired value; a correcting portion 104 for correcting the acquired value received by the state value receiving portion 102, using the correction amount calculated by the correction amount calculating portion 103; and an output portion 105 for outputting a result of correction performed by the correcting portion 104.

摘要翻译： 一种信息处理设备100，用于处理获取值，该获取值是由处理期间的状态获取的值，由半导体制造设备200执行，用于根据设定值对包含半导体的处理对象进行处理， 是用于设定治疗条件的值，包括：用于接收设定值的设定值接收部101; 用于接收所获取的值的状态值接收部分102; 校正量计算部分103，用于使用指示设定值和获取值之间的关系的校正函数来计算获取值的校正量; 校正部分104，用于使用由校正量计算部分103计算的校正量来校正由状态值接收部分102接收到的获取值; 以及输出部分105，用于输出校正部分104执行的校正结果。

公开(公告)号：US20070282554A1

公开(公告)日：2007-12-06

申请号：US11754643

申请日：2007-05-29

申请人： Noriaki KOYAMA ,  Minoru Obata ,  Wenling Wang

发明人： Noriaki KOYAMA ,  Minoru Obata ,  Wenling Wang

IPC分类号： G06F19/00

CPC分类号： G05B23/0221 ,  G05B2219/32184 ,  G05B2219/32192 ,  G05B2219/45031 ,  Y02P90/22

摘要： A information processing apparatus 100 for processing an acquired value, which is a value acquired in regard to a state during a treatment, performed by a semiconductor manufacturing apparatus 200 for performing a treatment on a treatment target containing a semiconductor according to a set value, which is a value for setting a condition of a treatment, includes: a set value receiving portion 101 for receiving the set value; a state value receiving portion 102 for receiving the acquired value; a correction amount calculating portion 103 for calculating a correction amount of the acquired value, using a correction function indicating a relationship between the set value and the acquired value; a correcting portion 104 for correcting the acquired value received by the state value receiving portion 102, using the correction amount calculated by the correction amount calculating portion 103; and an output portion 105 for outputting a result of correction performed by the correcting portion 104.

摘要翻译： 一种信息处理设备100，用于处理获取值，该获取值是由处理期间的状态获取的值，由半导体制造设备200执行，用于根据设定值对包含半导体的处理对象进行处理， 是用于设定治疗条件的值，包括：用于接收设定值的设定值接收部101; 用于接收所获取的值的状态值接收部分102; 校正量计算部分103，用于使用指示设定值和获取值之间的关系的校正函数来计算获取值的校正量; 校正部分104，用于使用由校正量计算部分103计算的校正量来校正由状态值接收部分102接收到的获取值; 以及输出部分105，用于输出校正部分104执行的校正结果。

公开(公告)号：US20110035165A1

公开(公告)日：2011-02-10

申请号：US12907716

申请日：2010-10-19

申请人： Noriaki KOYAMA ,  Minoru Obata ,  Wenling Wang

发明人： Noriaki KOYAMA ,  Minoru Obata ,  Wenling Wang

IPC分类号： G06F17/18 ,  G06F15/00 ,  G01F1/00 ,  G01K13/00 ,  G01L7/00

CPC分类号： G05B23/0221 ,  G05B2219/32184 ,  G05B2219/32192 ,  G05B2219/45031 ,  Y02P90/22

摘要： A information processing apparatus 100 for processing an acquired value, which is a value acquired in regard to a state during a treatment, performed by a semiconductor manufacturing apparatus 200 for performing a treatment on a treatment target containing a semiconductor according to a set value, which is a value for setting a condition of a treatment, includes: a set value receiving portion 101 for receiving the set value; a state value receiving portion 102 for receiving the acquired value; a correction amount calculating portion 103 for calculating a correction amount of the acquired value, using a correction function indicating a relationship between the set value and the acquired value; a correcting portion 104 for correcting the acquired value received by the state value receiving portion 102, using the correction amount calculated by the correction amount calculating portion 103; and an output portion 105 for outputting a result of correction performed by the correcting portion 104.

摘要翻译： 一种信息处理设备100，用于处理获取值，该获取值是由处理期间的状态获取的值，由半导体制造设备200执行，用于根据设定值对包含半导体的处理对象进行处理， 是用于设定治疗条件的值，包括：用于接收设定值的设定值接收部101; 用于接收所获取的值的状态值接收部分102; 校正量计算部分103，用于使用指示设定值和获取值之间的关系的校正函数来计算获取值的校正量; 校正部分104，用于使用由校正量计算部分103计算的校正量来校正由状态值接收部分102接收到的获取值; 以及输出部分105，用于输出校正部分104执行的校正结果。

公开(公告)号：US07896649B2

公开(公告)日：2011-03-01

申请号：US12071923

申请日：2008-02-27

申请人： Noriaki Koyama ,  Wenling Wang

发明人： Noriaki Koyama ,  Wenling Wang

IPC分类号： G06F19/00 ,  C23C16/52

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： The present invention provides a heating system, a heating method and a program, which can readily control processing temperature. A temperature calculating computer 4 of the heating system includes a device DB 42. The device DB 42 stores therein a temperature correcting table indicative of a relationship between an accumulated film thickness of extraneous matter attached to the interior of each heating apparatus and a temperature correcting amount, with respect to each heating apparatus, for each temperature (processing temperature) in the heating apparatus. Thus, the temperature correcting amount can be specified based on the temperature correcting table, the processing temperature and the accumulated film thickness, so that an optimized value can be calculated from the specified temperature correcting amount.

摘要翻译： 本发明提供一种可以容易地控制加工温度的加热系统，加热方法和程序。 加热系统的温度计算计算机4包括装置DB 42.装置DB 42中存储有温度校正表，该温度校正表指示附着在每个加热装置的内部的外来物质的累积膜厚与温度校正量之间的关系 对于每个加热装置，对于加热装置中的每个温度（加工温度）。 因此，可以基于温度校正表，处理温度和累积膜厚来指定温度校正量，从而可以根据指定的温度校正量计算优化值。

公开(公告)号：US20080213716A1

公开(公告)日：2008-09-04

申请号：US12071923

申请日：2008-02-27

申请人： Noriaki Koyama ,  Wenling Wang

发明人： Noriaki Koyama ,  Wenling Wang

IPC分类号： H01L21/00

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： The present invention provides a heating system, a heating method and a program, which can readily control processing temperature. A temperature calculating computer 4 of the heating system includes a device DB 42. The device DB 42 stores therein a temperature correcting table indicative of a relationship between an accumulated film thickness of extraneous matter attached to the interior of each heating apparatus and a temperature correcting amount, with respect to each heating apparatus, for each temperature (processing temperature) in the heating apparatus. Thus, the temperature correcting amount can be specified based on the temperature correcting table, the processing temperature and the accumulated film thickness, so that an optimized value can be calculated from the specified temperature correcting amount.

摘要翻译： 本发明提供一种可以容易地控制加工温度的加热系统，加热方法和程序。 加热系统的温度计算计算机4包括装置DB 42。 装置DB42在其中存储有温度校正表，该温度校正表针对每个温度（处理温度），指示每个加热装置内部附着的外来物质的累积膜厚与温度校正量之间的关系， 在加热装置中。 因此，可以基于温度校正表，处理温度和累积膜厚来指定温度校正量，从而可以根据指定的温度校正量计算优化值。

公开(公告)号：US20130065189A1

公开(公告)日：2013-03-14

申请号：US13611317

申请日：2012-09-12

申请人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

发明人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

IPC分类号： F27D15/02 ,  F27D3/00 ,  F27D21/00

CPC分类号： H01L21/67109 ,  C23C16/463 ,  C23C16/481 ,  H01L21/67248 ,  H01L21/67303 ,  H01L21/67757

摘要： A thermal treatment apparatus includes a processing container, a substrate holding unit for holding a plurality of substrates at predetermined intervals in a direction inside the processing container, a heating unit for heating the processing container, a supply unit for supplying gas, a plurality of supply ports provided respectively at different locations in the direction, and a cooling unit for cooling the processing container by supplying the gas into the processing container by the supply unit via each of the supply ports, wherein the supply unit is provided in such a way that the supply unit independently controls flow rates of the gases supplied via each of the supply ports.

摘要翻译： 热处理装置包括处理容器，用于以规定的间隔在处理容器内的方向保持多个基板的基板保持单元，加热处理容器的加热单元，供给气体的供给单元，多个供给部 分别在方向不同位置设置的端口，以及冷却单元，用于通过供给单元经由每个供给口将气体供给到处理容器中来冷却处理容器，其中，供给单元设置成 供应单元独立地控制经由每个供应端口供应的气体的流量。

公开(公告)号：US07625604B2

公开(公告)日：2009-12-01

申请号：US10523803

申请日：2003-08-08

申请人： Keisuke Suzuki ,  Wenling Wang ,  Tsukasa Yonekawa ,  Toshiyuki Ikeuchi ,  Toru Sato

发明人： Keisuke Suzuki ,  Wenling Wang ,  Tsukasa Yonekawa ,  Toshiyuki Ikeuchi ,  Toru Sato

IPC分类号： C23C16/00

CPC分类号： H01L21/67253 ,  C23C16/46 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/31662 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/20 ,  Y10T436/25

摘要： The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step. Then, a third thermal processing step carries out thermal processing steps by using production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected during the previous step.

摘要翻译： 热处理方法技术领域本发明涉及一种热处理方法，其包括使用多个第一基板进行热处理步骤的第一热处理步骤，其中通过较少的处理气体的消耗在多个第一基板的表面上形成薄膜 比生产基板的表面。 然后，第二热处理步骤通过使用多个第二基板进行热处理步骤，其中通过更多的处理气体的消耗而在多个第二基板的表面上形成薄膜，而不是在多个第二基板的表面上形成薄膜 第一基板，并且其中加热单元分别被调整到在前一步骤期间设置的相应温度设定值。 然后，第三热处理步骤通过使用生产基板作为多个基板来进行热处理步骤，其中多个加热单元分别被调整到在前一步骤期间校正的各个温度设定值。

公开(公告)号：US09324591B2

公开(公告)日：2016-04-26

申请号：US13438234

申请日：2012-04-03

申请人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

发明人： Koji Yoshii ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

IPC分类号： F27D21/00 ,  H01L21/67

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： A heat treatment apparatus including: a processing container for processing wafers held in a boat; heaters for heating the processing container; and a control section for controlling the heaters. Heater temperature sensors are provided between the heaters and the processing container, in-container temperature sensors are provided in the processing container, and movable temperature sensors are provided in the boat. The temperature sensors are connected to a temperature estimation section. The temperature estimation section selects two of the three types of temperature sensors, e.g. the movable temperature sensors and the in-container temperature sensors, and determines the temperature of a wafer according to the following formula: T=T1×(1−α)+T2×α, α>1, where T1 and T2 represent detection temperatures of the selected temperature sensors, and α represents a mixing ratio.

摘要翻译： 一种热处理设备，包括：处理容器，用于处理保存在船上的晶片; 用于加热处理容器的加热器; 以及用于控制加热器的控制部。 加热器温度传感器设置在加热器和处理容器之间，容器内温度传感器设置在处理容器中，并且可移动的温度传感器设置在船上。 温度传感器连接到温度估计部。 温度估计部分选择三种类型的温度传感器中的两种，例如， 可移动温度传感器和容器内温度传感器，并根据以下公式确定晶片的温度：T = T1×（1-α）+ T2×α，α> 1，其中T1和T2表示检测温度 的选定温度传感器，α表示混合比。

公开(公告)号：US20120258415A1

公开(公告)日：2012-10-11

申请号：US13438234

申请日：2012-04-03

申请人： Koji YOSHII ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

发明人： Koji YOSHII ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Takanori Saito

IPC分类号： F27D21/00 ,  F27D3/00

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： A heat treatment apparatus including: a processing container for processing wafers held in a boat; heaters for heating the processing container; and a control section for controlling the heaters. Heater temperature sensors are provided between the heaters and the processing container, in-container temperature sensors are provided in the processing container, and movable temperature sensors are provided in the boat. The temperature sensors are connected to a temperature estimation section. The temperature estimation section selects two of the three types of temperature sensors, e.g. the movable temperature sensors and the in-container temperature sensors, and determines the temperature of a wafer according to the following formula: T=T1×(1−α)+T2×α, α>1, where T1 and T2 represent detection temperatures of the selected temperature sensors, and α represents a mixing ratio.

摘要翻译： 一种热处理设备，包括：处理容器，用于处理保存在船上的晶片; 用于加热处理容器的加热器; 以及用于控制加热器的控制部。 加热器温度传感器设置在加热器和处理容器之间，容器内温度传感器设置在处理容器中，并且可移动的温度传感器设置在船上。 温度传感器连接到温度估计部。 温度估计部分选择三种类型的温度传感器中的两种，例如， 可移动温度传感器和容器内温度传感器，并根据以下公式确定晶片的温度：T = T1×（1-α）+ T2×α，α> 1，其中T1和T2表示检测温度 的选定温度传感器，α表示混合比。

公开(公告)号：US07860585B2

公开(公告)日：2010-12-28

申请号：US12081211

申请日：2008-04-11

申请人： Goro Takahashi ,  Hisashi Inoue ,  Shoichi Kanda ,  Wenling Wang

发明人： Goro Takahashi ,  Hisashi Inoue ,  Shoichi Kanda ,  Wenling Wang

IPC分类号： G05D23/00 ,  G05B13/02 ,  H05B1/02

CPC分类号： G05D23/1935 ,  H01L21/67109 ,  H01L21/67248

摘要： A heat processing apparatus includes a reaction vessel, a heating unit in the reaction vessel to heat the processing region, a temperature detector that detects temperature in the processing region, and a control part to control the heating unit by PID control. The control part has a rule table, and a performance unit that obtains temperature profiles and calculates differences between actually measured temperatures and target values. It refers to the rule table change the PID constants. The control part also updates relationships between PID constants and predicted temperature change amounts.

摘要翻译： 热处理装置包括反应容器，反应容器内加热处理区域的加热单元，检测加工区域的温度的温度检测器以及通过PID控制来控制加热单元的控制部。 控制部分具有规则表和获得温度曲线并计算实际测量温度和目标值之间的差异的性能单元。 它是指规则表改变PID常数。 控制部分还更新PID常数和预测温度变化量之间的关系。