公开(公告)号：US5899708A

公开(公告)日：1999-05-04

申请号：US872781

申请日：1997-06-10

申请人： Nobuhiro Tanaka ,  Takeshi Fukunaga

发明人： Nobuhiro Tanaka ,  Takeshi Fukunaga

IPC分类号： H01L21/205 ,  H01L21/265 ,  H01L21/336 ,  H01L23/60 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/66757 ,  H01L23/60 ,  H01L29/78603 ,  H01L2924/0002 ,  Y10S438/928

摘要： In manufacturing a semiconductor device on a glass substrate, a conductive thin-film (for instance, a conductivity-imparted silicon film) is formed on the bottom surface side of the glass substrate at the initial stage of a manufacturing process. Since the conductive thin film serves as an electrostatic shield, the glass substrate is prevented from being electrified directly, whereby electrostatic breakdown of device elements as would otherwise be caused by electrification of the glass substrate can be avoided.

摘要翻译： 在制造玻璃基板上的半导体装置时，在制造工序的初始阶段，在玻璃基板的底面侧形成有导电性薄膜（例如导电性赋予硅膜）。 由于导电薄膜用作静电屏蔽，因此可以防止玻璃基板直接通电，从而可以避免玻璃基板带电导致器件元件的静电击穿。

公开(公告)号：US08405594B2

公开(公告)日：2013-03-26

申请号：US12892277

申请日：2010-09-28

申请人： Yukio Yamauchi ,  Takeshi Fukunaga

发明人： Yukio Yamauchi ,  Takeshi Fukunaga

IPC分类号： G09G3/36

CPC分类号： G09G3/3225 ,  G09G3/2018 ,  G09G3/2022 ,  G09G3/30 ,  G09G3/32 ,  G09G3/3258 ,  G09G2300/023 ,  G09G2300/04 ,  G09G2300/0408 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0842 ,  H01L27/1277 ,  H01L27/1296 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/0603 ,  H01L29/786 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L33/62 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2924/0002 ,  H01L2924/00

摘要： An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

公开(公告)号：US08319424B2

公开(公告)日：2012-11-27

申请号：US13284031

申请日：2011-10-28

申请人： Shunpei Yamazaki ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Takeshi Fukunaga

IPC分类号： H05B33/06 ,  H01J1/62 ,  H01L33/00

CPC分类号： H01L51/524 ,  G01N33/497 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/3227 ,  H01L27/3262 ,  H01L27/3276 ,  H01L27/3279 ,  H01L27/3288 ,  H01L27/329 ,  H01L31/153 ,  H01L33/62 ,  H01L51/0097 ,  H01L51/5203 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2924/0002 ,  H05K1/0298 ,  H05K3/323 ,  H05K3/361 ,  H05K2201/093 ,  H05K2201/10128 ,  H05K2201/1031 ,  Y02P70/611 ,  H01L2924/00

摘要： A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings) (110) on the printed wiring board (107) is electrically connected to element side wirings (first group of wirings) (103, 104) by anisotropic conductive films (105a, 105b). At this point, because a low resistant copper foil is used to form the PWB side wiring (110), a voltage drop of the element side wirings (103, 104) and a delay of a signal can be reduced. Accordingly, the homogeneity of the quality of an image is improved, and the operating speed of a driver circuit portion is enhanced.

摘要翻译： 提供具有均匀性高的图像质量的发光装置。 面向其上形成有发光元件（102）的基板（第一基板）（101）设置有印刷布线板（第二基板）（107）。 印刷电路板（107）上的PWB侧布线（第二组布线）（110）通过各向异性导电膜（105a，105b）与元件侧布线（第一组布线）（103,104）电连接。 此时，由于使用低电阻铜箔来形成PWB侧布线（110），可以降低元件侧布线（103,104）的电压降和信号的延迟。 因此，提高了图像质量的均匀性，并且提高了驱动器电路部分的操作速度。

公开(公告)号：US20120068266A1

公开(公告)日：2012-03-22

申请号：US13282515

申请日：2011-10-27

申请人： Hongyong ZHANG ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

发明人： Hongyong ZHANG ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

IPC分类号： H01L27/12

CPC分类号： H01L21/02672 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1251 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757

摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor having low leak current and high mobility are obtained in the same time in a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

摘要翻译： 提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。 通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜 或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火， 。 在具有薄膜晶体管的动态电路中同时获得具有低漏电流和高迁移率的晶体管，在半导体层上选择性地形成覆盖膜，半导体层将成为晶体管的有源层，并且之后将其热结晶 。

公开(公告)号：US08139557B2

公开(公告)日：2012-03-20

申请号：US12066083

申请日：2005-09-30

申请人： Tsuyoshi Tominaga ,  Kunio Satou ,  Yasuhiro Ohnaka ,  Takeshi Fukunaga

发明人： Tsuyoshi Tominaga ,  Kunio Satou ,  Yasuhiro Ohnaka ,  Takeshi Fukunaga

IPC分类号： H04J3/06

CPC分类号： H04B7/2621 ,  H04L5/0007 ,  H04L5/0023 ,  H04L5/0048 ,  H04L5/0053 ,  H04L5/0073 ,  H04L27/2605 ,  H04L27/2613 ,  H04L27/2656 ,  H04W16/12 ,  H04W56/001 ,  H04W92/20

摘要： A radio base-station apparatus with improved frame transmission efficiency by avoiding interference of preambles and frame control information between sectors of a cell or between cells with a frequency reuse factor. In the apparatus OFDMA multiple-access processing is performed for each of a plurality of sectors of a cell, and frames made of logical subchannel numbers and OFDMA symbol numbers are configured in synchronization respectively for the plurality of sectors, and offsets are added to the beginnings of given frames such that the preambles and frame control information arranged sequentially from the beginnings of the frames do not overlap on the OFDMA symbol numbers.

摘要翻译： 一种无线基站装置，通过避免前置信号干扰和小区扇区之间或小区之间的频率复用因子，从而提高帧传输效率。 在该装置中，对小区的多个扇区中的每一个执行多载波处理，由多个扇区分别配置由逻辑子信道号和OFDMA符号号构成的帧，并将偏移量加到起始点 使得从帧开始顺序排列的前导码和帧控制信息在OFDMA符号号上不重叠。

公开(公告)号：US08008693B2

公开(公告)日：2011-08-30

申请号：US11670462

申请日：2007-02-02

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Akiharu Miyanaga ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Akiharu Miyanaga ,  Takeshi Fukunaga

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/02672 ,  G02B27/017 ,  G02B2027/0138 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/8221 ,  H01L27/1277 ,  H01L29/045 ,  H01L29/665 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78654 ,  H01L29/78675

摘要： A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.

摘要翻译： 薄膜半导体晶体管结构具有具有电介质表面的基板和由半导体薄膜制成的有源层，其表现出与单晶相当的结晶度。 为了制造晶体管，在衬底上形成半导体薄膜，该薄膜包括可以是基本上平行于衬底的柱状晶体和/或毛细晶体的多个晶体的混合物。 然后在所选择的含有卤素的气氛中对所得结构进行热氧化，从而去除膜中所含的任何金属元素。 这可以形成单畴区域，其中单个柱状或毛细晶体晶体与任何相邻晶体接触，并且其能够基本上被认为是单晶区域，而不存在或包含任何晶粒边界 。 该区域用于形成晶体管的有源层。

公开(公告)号：US07998844B2

公开(公告)日：2011-08-16

申请号：US12219026

申请日：2008-07-15

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/22 ,  H01L21/38 ,  H01L21/31 ,  H01L21/469 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US07820464B2

公开(公告)日：2010-10-26

申请号：US12408194

申请日：2009-03-20

申请人： Shunpei Yamazaki ,  Takeshi Fukunaga ,  Jun Koyama ,  Kazutaka Inukai

发明人： Shunpei Yamazaki ,  Takeshi Fukunaga ,  Jun Koyama ,  Kazutaka Inukai

IPC分类号： H01L21/00

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/3244

摘要： The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.

摘要翻译： 根据本发明的发光器件的特征在于，形成包括多个导电膜的栅电极，并且利用蚀刻中的导电膜的选择性并使用它们来调节有源层中的杂质区域的浓度 作为面具。 本发明减少了相对于制造用于提高发光装置的产量的TFT并缩短其制造术语的光刻步骤的数量，通过该步骤，廉价地提供了发光装置和电子设备。

公开(公告)号：US07812351B2

公开(公告)日：2010-10-12

申请号：US12121852

申请日：2008-05-16

申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Jun Koyama ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Jun Koyama ,  Takeshi Fukunaga

IPC分类号： H01L29/15 ,  H01L27/12

CPC分类号： H01L27/0688 ,  G02F1/1362 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66772 ,  H01L29/78654 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1872 ,  H01L2924/0002 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S257/903 ,  Y10S257/904 ,  H01L2924/00

摘要： A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.

摘要翻译： 形成具有侧向生长区域的半导体薄膜，该横向生长区域是大体平行于基底延伸的柱状或针状晶体的集合。 半导体薄膜用具有等效能量的激光或强光照射。 结果，相邻的柱状或针状结晶结合在一起形成基本上不具有晶界的区域，即基本上被认为是单晶的单畴区域。 通过使用单畴区域作为有源层形成半导体器件。

公开(公告)号：US20100255184A1

公开(公告)日：2010-10-07

申请号：US12759776

申请日：2010-04-14

申请人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Takeshi Fukunaga

IPC分类号： B05D5/06

CPC分类号： H01L51/56 ,  H01L21/6715 ,  H01L21/67207 ,  H01L51/0003

摘要： To provide a film deposition apparatus capable of forming an EL element of high reliability. An oxidization cell (205) is placed in a liquid phase film deposition chamber (109) such as a spin coater. The oxidization cell is provided with an oxygen gettering agent (209) comprised of an element that belongs to Group 1 or 2 of the periodic table. The oxygen gettering agent (209) is oxidized consuming oxygen in the atmosphere of the chamber, to thereby reduce the oxygen concentration in the atmosphere to 1 ppb or less. This makes it possible to form an EL element in a substantially oxygen-less state, greatly improving the reliability of the EL element.

摘要翻译： 提供能够形成高可靠性的EL元件的成膜装置。 将氧化池（205）放置在诸如旋转涂布机的液相成膜室（109）中。 氧化池配有由元素组成的吸气剂（209），该元素属于元素周期表第1族或第2族。 氧吸气剂（209）在室的气氛中氧化消耗氧，从而将大气中的氧浓度降低至1ppb以下。 这使得可以形成基本上无氧状态的EL元件，大大提高了EL元件的可靠性。