公开(公告)号：US20230115340A1

公开(公告)日：2023-04-13

申请号：US17491309

申请日：2021-09-30

Applicant: NXP USA, Inc

Inventor： Yun Wei ,  Scott Duncan Marshall ,  Lakshminarayan Viswanathan ,  Taek Kyu Kim ,  Ricardo Uscola ,  Fernando A. Santos

IPC: H01L25/065 ,  H03F3/213 ,  H01L23/31 ,  H01L23/498 ,  H01L25/00

Abstract: Leadless power amplifier (PA) packages having topside termination interposer (TTI) arrangements, and associated fabrication methods, are disclosed. Embodiments of the leadless PA package include a base flange, a first set of interposer mount pads, a first RF power die, a package body. The first RF power die is attached to a die mount surface of the base flange and electrically interconnected with the first set of interposer mount pads. The TTI arrangement is electrically coupled to the first set of interposer mount pads and projects therefrom in the package height direction. The package body encloses the first RF power die and having a package topside surface opposite the lower flange surface. Topside input/output terminals of the PA package are accessible from the package topside surface and are electrically interconnected with the first RF power die through the TTI arrangement and the first set of interposer mount pads.

公开(公告)号：US11349438B2

公开(公告)日：2022-05-31

申请号：US16730699

申请日：2019-12-30

Applicant: NXP USA, Inc.

Inventor： Yun Wei ,  Ricardo Uscola ,  Monte G. Miller

IPC: H03F3/68 ,  H03F1/02 ,  H01L23/00 ,  H03F3/195 ,  H03F3/21

Abstract: Power amplifier (PA) packages, such as Doherty PA packages, containing multi-path integrated passive devices (IPDs) are disclosed. In embodiments, the PA package includes a package body through which first and second signal amplification paths extend, a first amplifier die within the package body and positioned in the first signal amplification path, and a second amplifier die within the package body and positioned in the second signal amplification path. A multi-path IPD is further contained in the package body. The multi-path IPD includes a first IPD region through which the first signal amplification path extends, a second IPD region through which the second signal amplification path extends, and an isolation region formed in the IPD substrate a location intermediate the first IPD region and the second IPD region.

公开(公告)号：US11342275B2

公开(公告)日：2022-05-24

申请号：US17077583

申请日：2020-10-22

Applicant: NXP USA, Inc.

Inventor： Yun Wei ,  Fernando A. Santos ,  Lakshminarayan Viswanathan ,  Scott Duncan Marshall

IPC: H01L23/48 ,  H01L23/538 ,  H01L23/31 ,  H01L23/13 ,  H01L23/36

Abstract: Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.

公开(公告)号：US20210203278A1

公开(公告)日：2021-07-01

申请号：US16730699

申请日：2019-12-30

Applicant: NXP USA, Inc.

Inventor： Yun Wei ,  Ricardo Uscola ,  Monte G. Miller

IPC: H03F1/02 ,  H03F3/195 ,  H01L23/00

Abstract: Power amplifier (PA) packages, such as Doherty PA packages, containing multi-path integrated passive devices (IPDs) are disclosed. In embodiments, the PA package includes a package body through which first and second signal amplification paths extend, a first amplifier die within the package body and positioned in the first signal amplification path, and a second amplifier die within the package body and positioned in the second signal amplification path. A multi-path IPD is further contained in the package body. The multi-path IPD includes a first IPD region through which the first signal amplification path extends, a second IPD region through which the second signal amplification path extends, and an isolation region formed in the IPD substrate a location intermediate the first IPD region and the second IPD region.

公开(公告)号：US10608588B2

公开(公告)日：2020-03-31

申请号：US15854034

申请日：2017-12-26

Applicant: NXP USA, Inc.

Inventor： Yun Wei ,  Monte Miller

IPC: H03F1/22 ,  H03F1/02 ,  H03F3/195 ,  H01L23/66 ,  H01L29/20 ,  H03F3/30

Abstract: Embodiments of an amplifiers and integrated circuits include a first transistor and a second transistor. A second current-carrying terminal of the first transistor may be coupled to a first current-carrying terminal of the second transistor and the control terminal of the second transistor may be coupled to a low impedance alternating current (AC) potential node. A bias network that includes a first circuit element and a second circuit element couples the second current-carrying terminal of the second transistor to the control terminal of the second transistor. The first circuit element may be configured to apply a portion of a potential at the second current-carrying terminal of the second transistor to the control terminal of the second transistor, and the second circuit element may be coupled between the control terminal of the second transistor and a fixed potential.

公开(公告)号：US20190199289A1

公开(公告)日：2019-06-27

申请号：US15854034

申请日：2017-12-26

Applicant: NXP USA, Inc.

Inventor： Yun Wei ,  Monte Miller

IPC: H03F1/02 ,  H03F3/195 ,  H01L23/66 ,  H01L29/20

CPC classification number: H03F1/0205 ,  H01L23/66 ,  H01L29/2003 ,  H01L2223/665 ,  H03F3/195 ,  H03F2200/153 ,  H03F2200/451

Abstract: Embodiments of an amplifiers and integrated circuits include a first transistor and a second transistor. A second current-carrying terminal of the first transistor may be coupled to a first current-carrying terminal of the second transistor and the control terminal of the second transistor may be coupled to a low impedance alternating current (AC) potential node. A bias network that includes a first circuit element and a second circuit element couples the second current-carrying terminal of the second transistor to the control terminal of the second transistor. The first circuit element may be configured to apply a portion of a potential at the second current-carrying terminal of the second transistor to the control terminal of the second transistor, and the second circuit element may be coupled between the control terminal of the second transistor and a fixed potential.

公开(公告)号：US11984429B2

公开(公告)日：2024-05-14

申请号：US17491309

申请日：2021-09-30

Applicant: NXP USA, Inc.

Inventor： Yun Wei ,  Scott Duncan Marshall ,  Lakshminarayan Viswanathan ,  Taek Kyu Kim ,  Ricardo Uscola ,  Fernando A. Santos

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/498 ,  H01L25/00 ,  H03F3/213

CPC classification number: H01L25/0655 ,  H01L23/3121 ,  H01L23/49811 ,  H01L25/50 ,  H03F3/213 ,  H03F2200/451

Abstract: Leadless power amplifier (PA) packages having topside termination interposer (TTI) arrangements, and associated fabrication methods, are disclosed. Embodiments of the leadless PA package include a base flange, a first set of interposer mount pads, a first RF power die, a package body. The first RF power die is attached to a die mount surface of the base flange and electrically interconnected with the first set of interposer mount pads. The TTI arrangement is electrically coupled to the first set of interposer mount pads and projects therefrom in the package height direction. The package body encloses the first RF power die and having a package topside surface opposite the lower flange surface. Topside input/output terminals of the PA package are accessible from the package topside surface and are electrically interconnected with the first RF power die through the TTI arrangement and the first set of interposer mount pads.

公开(公告)号：US11621231B2

公开(公告)日：2023-04-04

申请号：US17659379

申请日：2022-04-15

Applicant: NXP USA, Inc.

Inventor： Yun Wei ,  Fernando A. Santos ,  Lakshminarayan Viswanathan ,  Scott Duncan Marshall

IPC: H01L23/48 ,  H01L23/538 ,  H01L23/13 ,  H01L23/31 ,  H01L23/36

Abstract: Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.

公开(公告)号：US20220238450A1

公开(公告)日：2022-07-28

申请号：US17659379

申请日：2022-04-15

Applicant: NXP USA, Inc.

Inventor： Yun Wei ,  Fernando A. Santos ,  Lakshminarayan Viswanathan ,  Scott Duncan Marshall

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/13

Abstract: Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.

公开(公告)号：US20220130768A1

公开(公告)日：2022-04-28

申请号：US17077583

申请日：2020-10-22

Applicant: NXP USA, Inc.

Inventor： Yun Wei ,  Fernando A. Santos ,  Lakshminarayan Viswanathan ,  Scott Duncan Marshall

IPC: H01L23/538 ,  H01L23/13 ,  H01L23/31

Abstract: Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.