公开(公告)号：US20190164784A1

公开(公告)日：2019-05-30

申请号：US15825079

申请日：2017-11-28

Applicant: NXP B.V.

Inventor： Siriluck Wongratanaporngoorn ,  Yao Jung Chang ,  Ekapong Tangpattanasaeree ,  Paradee Jitrungruang ,  Pitak Seantumpol

IPC: H01L21/56 ,  H01L21/683 ,  H01L21/768

Abstract: A method for wafer dicing and removing separated integrated circuit (IC) dies from a carrier substrate includes mounting a wafer on a substrate using an adhesive layer, laser scribing the adhesive layer to create defect regions in the adhesive layer, and performing a breaking step to separate the laser-scribed adhesive layer into separated adhesive portions corresponding to the IC dies. For a stealth-dicing (SD) technique, defect regions also are created in the wafer using a laser and the breaking step is an expansion step that simultaneously separates the dies and corresponding portions of adhesive. For a dice-before-grind (DBG) technique, the dies are separated by backside grinding before the breaking step. Efficient adhesive-layer separation is achieved with reduced backside chipping associated with conventional blade dicing.

公开(公告)号：US10607861B2

公开(公告)日：2020-03-31

申请号：US15825079

申请日：2017-11-28

Applicant: NXP B.V.

Inventor： Siriluck Wongratanaporngoorn ,  Yao Jung Chang ,  Ekapong Tangpattanasaeree ,  Paradee Jitrungruang ,  Pitak Seantumpol

IPC: H01L21/56 ,  H01L21/768 ,  H01L21/683 ,  H01L21/67 ,  H01L21/78 ,  B23K26/00

Abstract: A method for wafer dicing and removing separated integrated circuit (IC) dies from a carrier substrate includes mounting a wafer on a substrate using an adhesive layer, laser scribing the adhesive layer to create defect regions in the adhesive layer, and performing a breaking step to separate the laser-scribed adhesive layer into separated adhesive portions corresponding to the IC dies. For a stealth-dicing (SD) technique, defect regions also are created in the wafer using a laser and the breaking step is an expansion step that simultaneously separates the dies and corresponding portions of adhesive. For a dice-before-grind (DBG) technique, the dies are separated by backside grinding before the breaking step. Efficient adhesive-layer separation is achieved with reduced backside chipping associated with conventional blade dicing.

公开(公告)号：US09812339B1

公开(公告)日：2017-11-07

申请号：US15495915

申请日：2017-04-24

Applicant: NXP B.V.

Inventor： Pimpa Boonyatee ,  Pitak Seantumpol ,  Paradee Jitrungruang

IPC: H01L21/56 ,  H01L23/28 ,  H01L21/78 ,  H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/49513 ,  H01L24/13 ,  H01L24/48 ,  H01L2224/13024 ,  H01L2224/48247 ,  H01L2924/1815 ,  H01L2924/182

Abstract: A method of packaging a semiconductor die includes the steps of mounting the semiconductor die on a carrier, electrically connecting electrical contact pads of the semiconductor die to external electrical contacts, and encapsulating the die with a mold compound to form a packaged die. The packaged die is then thinned by using a dicing saw blade to trim the mold compound off of the top, non-active side of the package using a series of vertical cuts. This thinning step can be performed at the same time as a normal dicing step so no additional equipment or process steps are needed. Further, packages of varying thicknesses can be assembled simultaneously.