公开(公告)号：US11532546B2

公开(公告)日：2022-12-20

申请号：US17239884

申请日：2021-04-26

申请人： NXP B.V.

发明人： Viet Thanh Dinh ,  Bartholomeus Wilhelmus Christiaan Hovens ,  Marina Vroubel

IPC分类号： H01L23/522 ,  H01L49/02 ,  H01L27/08

摘要： A fringe capacitor comprises a plurality of unidirectional metal layers, wherein an orientation of a preferred direction of each of the unidirectional metal layers is in a same direction. First fingers of the fringe capacitor are formed in a first layer of the unidirectional metal layers, the first fingers being interdigitated and having a direction parallel to the orientation of the preferred direction. Second fingers of the fringe capacitor are formed in a second layer of the unidirectional metal layers, the second fingers being interdigitated and having a direction parallel to the orientation of the preferred direction, the first layer and the second layer separated by at least a layer of not having the orientation of the preferred direction and not having fingers of the fringe capacitor.

公开(公告)号：US20220344257A1

公开(公告)日：2022-10-27

申请号：US17239884

申请日：2021-04-26

申请人： NXP B.V.

发明人： Viet Thanh Dinh ,  Bartholomeus Wilhelmus Christiaan Hovens ,  Marina Vroubel

IPC分类号： H01L23/522 ,  H01L49/02

摘要： A fringe capacitor comprises a plurality of unidirectional metal layers, wherein an orientation of a preferred direction of each of the unidirectional metal layers is in a same direction. First fingers of the fringe capacitor are formed in a first layer of the unidirectional metal layers, the first fingers being interdigitated and having a direction parallel to the orientation of the preferred direction. Second fingers of the fringe capacitor are formed in a second layer of the unidirectional metal layers, the second fingers being interdigitated and having a direction parallel to the orientation of the preferred direction, the first layer and the second layer separated by at least a layer of not having the orientation of the preferred direction and not having fingers of the fringe capacitor

公开(公告)号：US10580906B1

公开(公告)日：2020-03-03

申请号：US16148285

申请日：2018-10-01

申请人： NXP B.V.

发明人： Viet Thanh Dinh ,  Marina Vroubel ,  Paul Alexander Grudowski

IPC分类号： H01L29/861 ,  H01L29/417 ,  H01L27/02 ,  H01L29/66 ,  H01L29/40 ,  H01L29/06

摘要： A semiconductor device comprising a pn junction diode and a method of making the same. The device includes a semiconductor substrate having a first conductivity type. The device also includes a buried oxide layer located in the substrate. The device further includes a semiconductor region having a second conductivity type extending beneath the buried oxide layer to form a pn junction with a semiconductor region having the first conductivity type. The pn junction is located beneath the buried oxide layer and extends substantially orthogonally with respect to a major surface of the substrate. The device also includes a field plate electrode comprising a semiconductor region located above the buried oxide layer for modifying an electric field at the pn junction by application of a potential to the field plate electrode.