公开(公告)号：US10937782B2

公开(公告)日：2021-03-02

申请号：US15705017

申请日：2017-09-14

申请人： NXP B.V.

发明人： Dolphin Abessolo Bidzo ,  Janusz Tomasz Klimczak ,  Detlef Clawin ,  Radu Mircea Secareanu

IPC分类号： H01L27/02 ,  H02H9/04 ,  H01L27/06 ,  H01L23/66 ,  H01L23/522 ,  H01L49/02

摘要： An electrostatic discharge, ESD, protection structure (200) formed within a semiconductor substrate of an integrated circuit device (600). The integrated circuit device (600) comprising: a radio frequency domain (632); a digital domain (610). The ESD protection structure (200) further includes an intermediate domain located between the radio frequency domain (632) and the digital domain (610) that comprises at least one radio frequency, RF, passive or active device that exhibits an impedance characteristic that increases as a frequency of operation increases.

公开(公告)号：US20190081037A1

公开(公告)日：2019-03-14

申请号：US15705017

申请日：2017-09-14

申请人： NXP B.V.

发明人： Dolphin Abessolo Bidzo ,  Janusz Tomasz Klimczak ,  Detlef Clawin ,  Radu Mircea Secareanu

IPC分类号： H01L27/02 ,  H02H9/04 ,  H01L27/06 ,  H01L49/02 ,  H01L23/66 ,  H01L23/522

摘要： An electrostatic discharge, ESD, protection structure (200) formed within a semiconductor substrate of an integrated circuit device (600). The integrated circuit device (600) comprising: a radio frequency domain (632); a digital domain (610). The ESD protection structure (200) further includes an intermediate domain located between the radio frequency domain (632) and the digital domain (610) that comprises at least one radio frequency, RF, passive or active device that exhibits an impedance characteristic that increases as a frequency of operation increases.