公开(公告)号：US09142625B2

公开(公告)日：2015-09-22

申请号：US13651096

申请日：2012-10-12

Applicant: NXP B.V.

Inventor： Anco Heringa ,  Gerhard Koops ,  Boni Kofi Boksteen ,  Alessandro Ferrara

IPC: H01L21/02 ,  H01L29/40 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/402 ,  H01L29/404 ,  H01L29/7835 ,  H01L29/78624

Abstract: Embodiments of a semiconductor device, a circuit including a semiconductor device and a driver circuit, and a method for operating a semiconductor device are described. In one embodiment, a semiconductor device includes a substrate, a source region, a drain region, and a drain extension region formed in the substrate, and an insulation layer adjacent to the drain extension region. A gate layer and a field plate are formed one of within and on the insulation layer. The field plate is located adjacent to the drain extension region and is electrically insulated from the gate layer and the source region such that a voltage can be applied to the field plate independent from voltages applied to the gate layer and the source region. Other embodiments are also described.

Abstract translation: 描述半导体器件，包括半导体器件和驱动器电路的电路的实施例以及用于操作半导体器件的方法。 在一个实施例中，半导体器件包括在衬底中形成的衬底，源极区，漏极区和漏极延伸区以及与漏极延伸区相邻的绝缘层。 绝缘层内部和之上形成栅极层和场板。 场板位于漏极延伸区域附近，并且与栅极层和源极区域电绝缘，使得电压可以独立于施加到栅极层和源极区域的电压施加到场板。 还描述了其它实施例。