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1.发明授权公开(公告)号：US09515257B2
公开(公告)日：2016-12-06
申请号：US15045822
申请日：2016-02-17
发明人： Mark C. Hersam , Vinod K. Sangwan , Deep M. Jariwala , In Soo Kim , Tobin J. Marks , Lincoln J. Lauhon
CPC分类号： H01L45/1206 , G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/15 , G11C2213/53 , H01L27/2463 , H01L45/08 , H01L45/1226 , H01L45/1253 , H01L45/142 , H01L45/143 , H01L45/1616 , H01L45/1625
摘要： In one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel.
摘要翻译： 在本发明的一个方面，忆阻器包括由原子薄的材料形成的单层膜，其中单层膜具有至少一个晶界（GB），第一电极和第二电极与单层膜电耦合以限定 忆阻器通道，使得至少一个GB位于忆阻器通道中，以及栅极电极与忆阻器通道电容耦合。
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2.发明申请GATE-TUNABLE ATOMICALLY-THIN MEMRISTORS AND METHODS FOR PREPARING SAME AND APPLICATIONS OF SAME 有权GATE-TUNABLE原子力学仪器及其制备方法及其应用公开(公告)号：US20160248007A1
公开(公告)日：2016-08-25
申请号：US15045822
申请日：2016-02-17
发明人： Mark C. Hersam , Vinod K. Sangwan , Deep M. Jariwala , In Soo Kim , Tobin J. Marks , Lincoln J. Lauhon
CPC分类号： H01L45/1206 , G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/15 , G11C2213/53 , H01L27/2463 , H01L45/08 , H01L45/1226 , H01L45/1253 , H01L45/142 , H01L45/143 , H01L45/1616 , H01L45/1625
摘要： In one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel.
摘要翻译： 在本发明的一个方面，忆阻器包括由原子薄的材料形成的单层膜，其中单层膜具有至少一个晶界（GB），第一电极和第二电极与单层膜电耦合以限定 忆阻器通道，使得至少一个GB位于忆阻器通道中，以及栅极电极与忆阻器通道电容耦合。
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