WAVELENGTH CONVERTING MEMBER AND PROJECTOR INCLUDING THE WAVELENGTH CONVERTING MEMBER

    公开(公告)号:US20170153536A1

    公开(公告)日:2017-06-01

    申请号:US15430735

    申请日:2017-02-13

    Abstract: A wavelength converting member includes at least a first, second, and third regions, circumferentially on a disc-shaped light-transmissive substrate. The first region includes, from a light incident direction, a first and second phosphor layers. The first phosphor layer includes a first phosphor to absorb at least part of incident light and to emit a first light having a wavelength different from the incident light. The first phosphor layer defines an indentation in a surface on the second phosphor layer side, with a depth a half or more of the thickness of a portion of the first phosphor layer absent of the indentation. The second phosphor layer includes a second phosphor to absorb at least part of the first light emitted by the first phosphor and to emit a second light having a wavelength different from the first light, and is disposed in the indentation of the first phosphor layer.

    WAVELENGTH CONVERSION MEMBER, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE
    3.
    发明申请
    WAVELENGTH CONVERSION MEMBER, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE 有权
    波长转换构件,其制造方法和发光装置

    公开(公告)号:US20160149097A1

    公开(公告)日:2016-05-26

    申请号:US14947006

    申请日:2015-11-20

    Abstract: A method for manufacturing a wavelength conversion member includes: forming a phosphor layer on a base body including phosphor particles and oxide particles affixed to surfaces of the phosphor particles; and forming a cover layer covering the surfaces of the phosphor particles and surfaces of the oxide particles continuously, and having a same oxide material as the oxide particles. A wavelength conversion member includes: a base body, a phosphor layer disposed on the base body and including phosphor particles and oxide particles affixed to surfaces of the phosphor particles; and a cover layer covering the surfaces of the phosphor particles and surfaces of the oxide particles continuously, and including a same oxide material as the oxide particles.

    Abstract translation: 一种波长转换部件的制造方法包括:在基体上形成荧光体层,该荧光体层包含荧光体粒子和固定在荧光体粒子表面的氧化物粒子; 并且形成覆盖荧光体颗粒表面和氧化物颗粒表面的覆盖层,并且具有与氧化物颗粒相同的氧化物质。 波长转换构件包括:基体,设置在基体上的荧光体层,并且包括荧光体颗粒和附着到荧光体颗粒表面的氧化物颗粒; 以及覆盖荧光体颗粒的表面和氧化物颗粒的表面的覆盖层,并且包括与氧化物颗粒相同的氧化物材料。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号:US20140299974A1

    公开(公告)日:2014-10-09

    申请号:US14316485

    申请日:2014-06-26

    Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

    Abstract translation: 提供了包括基板,电极和发光区域的半导体发光器件。 基板可以具有在基板的基本上整个表面上以重复图案形成的突出部分,而表面的其余部分可以基本上是平坦的。 沿着与基板的表面正交的平面截取的突出部分的横截面可以是半圆形的。 突出部分的横截面可以是凸起的形状。 可以在衬底上形成缓冲层和GaN层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请

    公开(公告)号:US20200176631A1

    公开(公告)日:2020-06-04

    申请号:US16783496

    申请日:2020-02-06

    Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

    WAVELENGTH CONVERTING MEMBER AND PROJECTOR INCLUDING THE WAVELENGTH CONVERTING MEMBER
    8.
    发明申请
    WAVELENGTH CONVERTING MEMBER AND PROJECTOR INCLUDING THE WAVELENGTH CONVERTING MEMBER 有权
    波长转换构件和投影仪,包括波长转换构件

    公开(公告)号:US20160150200A1

    公开(公告)日:2016-05-26

    申请号:US14947072

    申请日:2015-11-20

    Abstract: A wavelength converting member includes at least a first, second, and third regions, circumferentially on a disc-shaped light-transmissive substrate. The first region includes, from a light incident direction, a first and second phosphor layers. The first phosphor layer includes a first phosphor to absorb at least part of incident light and to emit a first light having a wavelength different from the incident light. The first phosphor layer defines an indentation in a surface on the second phosphor layer side, with a depth a half or more of the thickness of a portion of the first phosphor layer absent of the indentation. The second phosphor layer includes a second phosphor to absorb at least part of the first light emitted by the first phosphor and to emit a second light having a wavelength different from the first light, and is disposed in the indentation of the first phosphor layer.

    Abstract translation: 波长转换构件至少包括第一,第二和第三区域,周向地在盘形透光基底上。 第一区域包括从光入射方向的第一和第二荧光体层。 第一荧光体层包括第一荧光体,其吸收入射光的至少一部分并发射具有与入射光不同的波长的第一光。 第一荧光体层在第二荧光体层侧的表面中限定凹陷,其深度是第一荧光体层的不存在凹陷的部分的厚度的一半或更多。 第二荧光体层包括第二荧光体,用于吸收由第一荧光体发射的第一光的至少一部分,并且发射具有与第一光不同的波长的第二光,并且设置在第一荧光体层的凹陷中。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请

    公开(公告)号:US20190326472A1

    公开(公告)日:2019-10-24

    申请号:US16458664

    申请日:2019-07-01

    Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

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